Micromachining Techniques for Advanced SiC MEMS

2000 ◽  
Vol 640 ◽  
Author(s):  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Thin Films ◽  
Microelectromechanical Systems ◽  
Reactive Ion Etching ◽  
Mechanical Polishing ◽  
Surface Micromachining ◽  
Ion Etching ◽  
Wet Chemical ◽  
Sacrificial Layers ◽  
Lift Off ◽  
Sic Films

ABSTRACTThis paper reviews the development of a multilayer, micromolding-based surface micromachining process for SiC microelectromechanical systems (MEMS). The micromolding process uses polysilicon and SiO2 thin films that are deposited onto polysilicon and SiO2 sacrificial layers, patterned into micromolds by reactive ion etching, filled with polycrystalline SiC (poly-SiC), planarized by mechanical polishing, and eventually dissolved and released in selective wet chemical etchants. In addition, a SiC lift-off technique that exploits the microstructural differences between SiC films deposited on Si, SiO2 and Si3N4 surfaces has been developed. The micromolding and lift-off techniques are being used as the basic patterning processes for a four-layer, poly-SiC surface micromachining process that we call the MUSiC (Multi-User SiC) process.

Chemically Assisted ion-Beam Etching of Sol-Gel Derived Pzt, Plzt And LITaO3 Thin Films for Silicon Based Device Integration

1993 ◽  
Vol 310 ◽  
Author(s):  
P. F. Baude ◽  
C. Ye ◽  
D.L. Polla
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Ion Etching ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Silicon Based

AbstractWet chemical, reactive ion etching and reactive ion-beam etching of sol-gel prepared PZT (54/46) [Pb(Zr,Ti)O3], Lanthanum doped PZT [PLZT (9/65/35)] and LiTaO3 have been investigated. Wet chemical etching using an HCI-HF solution, reactive-ion etching using a SF6 plasma and chemically assisted ion-beam etching (CAIBE) using a xenon plasma and chlorine reactive gas were used. Etch rates for each method were determined and the ability to define small features in the thin film ferroelectric was investigated. It was found that for structures smaller than approximately 20 × 20 μm2, chemically assisted ion beam etching provided by far the best results. 3 × 3 μm2 capacitor and 2 μm wide optical waveguide structures in PZT, PLZT respectively, were successfully fabricated using a CAIBE system. An etch depth monitor enabled accurate in-situ etch rate monitoring of the PLZT and PZT thin films.

Reactive Ion Etching of Al-1%Cu alloy thin films

2009 ◽  
Author(s):  
Jun Gou ◽  
Zhi-ming Wu ◽  
Hui-ling Tai ◽  
Kai Yuan
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Cu Alloy

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering

2011 ◽  
Vol 679-680 ◽  
pp. 217-220 ◽  
Author(s):  
Mariana A. Fraga
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Magnetron Sputtering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Magnetron Sputtering ◽  
Strain Gauges ◽  
Beam Bending ◽  
Lift Off ◽  
Sic Films

This work compares the piezoresistive properties of SiC thin films produced by two techniques enhanced by plasma, PECVD (plasma enhanced chemical vapor deposition) and RF magnetron sputtering. In order to study these properties, strain gauges based on SiC films produced were fabricated using photolithography techniques in conjunction with lift-off processes. The beam-bending method was used to characterize the SiC strain gauges fabricated.

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

2015 ◽  
Vol 587 ◽  
pp. 20-27 ◽  
Author(s):  
Adrian Adalberto Garay ◽  
Su Min Hwang ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Tio2 Thin Films ◽  
Ion Etching ◽  
Couple Plasma ◽  
Inductive Couple Plasma
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