Reactive ion etching of Si1−xGex alloy with hydrogen bromide

2004 ◽  
Vol 224 (1-4) ◽  
pp. 222-226 ◽  
Author(s):  
C.S. Wang ◽  
D.Y. Shu ◽  
W.Y. Hsieh ◽  
M.-J. Tsai
Keyword(s):  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Ion Etching

Reactive ion etching of Si1−xGex alloy with hydrogen bromide

2001 ◽  
Vol 227-228 ◽  
pp. 801-804 ◽  
Author(s):  
Lin Guo ◽  
Kaicheng Li ◽  
Daoguang Liu ◽  
Yihong Ou ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Ion Etching

scholarly journals The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4278
Author(s):  
Na Zhou ◽  
Junjie Li ◽  
Haiyang Mao ◽  
Hao Liu ◽  
Jinbiao Liu ◽  
...  
Keyword(s):  
High Selectivity ◽  
Microelectromechanical Systems ◽  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Mems Devices ◽  
Plasma Process ◽  
Ion Etching ◽  
Heavily Doped ◽  
Hbr Plasma

Heavily doped polysilicon layers have been widely used in the fabrication of microelectromechanical systems (MEMS). However, the investigation of high selectivity, anisotropy, and excellent uniformity of heavily doped polysilicon etching is limited. In this work, reactive ion etching of undoped and heavily doped polysilicon-based hydrogen bromide (HBr) plasmas have been compared. The mechanism of etching of heavily doped polysilicon is studied in detail. The final results demonstrate that the anisotropy profile of heavily doped polysilicon can be obtained based on a HBr plasma process. An excellent uniformity of resistance of the thermocouples reached ± 2.11%. This technology provides an effective way for thermopile and other MEMS devices fabrication.

Reactive ion etching of gallium nitride using hydrogen bromide plasmas

1994 ◽  
Vol 30 (22) ◽  
pp. 1895-1897 ◽  
Author(s):  
A.T. Ping ◽  
I. Adesida ◽  
J.N. Kuznia ◽  
M. Asif Khan
Keyword(s):  
Gallium Nitride ◽  
Hydrogen Bromide ◽  
Reactive Ion Etching ◽  
Ion Etching

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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