scholarly journals One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2563 ◽  
Author(s):  
Navid Mohammadian ◽  
Sheida Faraji ◽  
Srikrishna Sagar ◽  
Bikas C. Das ◽  
Michael L. Turner ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Low Cost ◽  
Tantalum Pentoxide ◽  
Organic Thin Film ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Saturation Field ◽  
Self Assembled

Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta2O5) as the gate dielectric. The morphology and dielectric properties of the anodized Ta2O5 films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta2O5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm2 V−1 s−1, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 103. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics.

Mixed self-assembled monolayer gate dielectrics for low-voltage solution-processed polymer field-effect transistors

2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner
Keyword(s):  
Carboxylic Acid ◽  
Phosphonic Acid ◽  
Field Effect ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Carboxylic Acid Groups ◽  
Self Assembled

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.

Solution Processed Self-Assembled Monolayer Gate Dielectrics for Low-Voltage Organic Transistors

2008 ◽  
Vol 1114 ◽  
Author(s):  
James Ball ◽  
Paul H Wöbkenberg ◽  
Florian Colléaux ◽  
Floris B Kooistra ◽  
Jan C Hummelen ◽  
...  
Keyword(s):  
Surface Energy ◽  
Organic Semiconductors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
High Volume ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

AbstractLow-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated.

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics

2009 ◽  
Author(s):  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Florian Colléaux ◽  
Jeremy Smith ◽  
Donal D. C. Bradley ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

scholarly journals Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

2008 ◽  
Vol 93 (1) ◽  
pp. 013303 ◽  
Author(s):  
Paul H. Wöbkenberg ◽  
James Ball ◽  
Floris B. Kooistra ◽  
Jan C. Hummelen ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Self Assembled

Patterning Organic Fluorescent Molecules with SAM Patterns

2011 ◽  
Vol 1335 ◽  
Author(s):  
Qiong Wu ◽  
Juanyuan Hao ◽  
Shoulei Shi ◽  
Weifeng Wang ◽  
Nan Lu
Keyword(s):  
Organic Molecules ◽  
Low Cost ◽  
Substrate Surface ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Storage Duration ◽  
Light Emitting ◽  
High Throughput Method ◽  
Self Assembled ◽  
Fluorescent Molecules

ABSTRACTWe report a low-cost and high-throughput method to fabricate large-area light emitting pattern via thermal evaporation of organic molecules on the patterned self-assembled monolayer of homogenous 3-aminopropyltrimethoxysilane. This method is based on the selective deposition of the organic light emitting molecules on the template of self-assembled monolayer (SAM), which is patterned with nanoimprinting lithography. The selectivity can be controlled by adjusting the design of the pattern, the storage duration and the substrate temperature. The deposition selectivity of the molecules may be caused by the different binding energy of the molecules with the SAM and the substrate surface.

scholarly journals Enhanced self-assembled monolayer treatment on polymeric gate dielectrics with ultraviolet/ozone assistance in organic thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (79) ◽  
pp. 64471-64477 ◽  
Author(s):  
Yan Yan ◽  
Ye Zhou ◽  
Long-Biao Huang ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Organic Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Self Assembled Monolayer ◽  
Polymeric Insulators ◽  
Assembled Monolayers ◽  
Time Dependent Effect ◽  
Self Assembled

Chemical vapor deposition (CVD) is utilized to form self-assembled monolayers on polymeric insulators. Ultraviolet/ozone (UVO) treatment is used to enhance the alignment of HMDS monolayer on polymeric insulator surface and a time dependent effect is observed for UVO.

Sign in / Sign up

Export Citation Format

Share Document