Patterning Organic Fluorescent Molecules with SAM Patterns

2011 ◽  
Vol 1335 ◽  
Author(s):  
Qiong Wu ◽  
Juanyuan Hao ◽  
Shoulei Shi ◽  
Weifeng Wang ◽  
Nan Lu
Keyword(s):  
Organic Molecules ◽  
Low Cost ◽  
Substrate Surface ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Storage Duration ◽  
Light Emitting ◽  
High Throughput Method ◽  
Self Assembled ◽  
Fluorescent Molecules

ABSTRACTWe report a low-cost and high-throughput method to fabricate large-area light emitting pattern via thermal evaporation of organic molecules on the patterned self-assembled monolayer of homogenous 3-aminopropyltrimethoxysilane. This method is based on the selective deposition of the organic light emitting molecules on the template of self-assembled monolayer (SAM), which is patterned with nanoimprinting lithography. The selectivity can be controlled by adjusting the design of the pattern, the storage duration and the substrate temperature. The deposition selectivity of the molecules may be caused by the different binding energy of the molecules with the SAM and the substrate surface.

Characterization of Polymer Light Emitting Diodes Fabricated by Ionically Self-Assembled Monolayer Technique

1999 ◽  
Vol 598 ◽  
Author(s):  
D. Marciu ◽  
M. B. Miller ◽  
J. R. Heflin ◽  
M. A. Murray ◽  
A. L. Ritter ◽  
...  
Keyword(s):  
Film Thickness ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Low Cost ◽  
Electrolyte Solutions ◽  
Aluminum Electrode ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Light Emitting ◽  
Self Assembled

ABSTRACTIonically self-assembled monolayer (ISAM) films are a recently developed class of materials that allows detailed structural and thickness control at the sub-nanometer level combined with ease of manufacturing and low cost. The ISAM fabrication method simply involves the dipping of a charged substrate alternately into polycationic and polyanionic aqueous solutions at room temperatures. Importantly, the ISAM technique yields exceptionally homogeneous, large area films with excellent control of total film thickness. We describe detailed studies of ISAM light emitting diodes incorporating poly(para-phenylene vinylene) (PPV) as the light emitting polymer. The individual thickness of each monolayer and the interpenetration of adjacent layers can be precisely controlled through the parameters of the electrolyte solutions. The effects of the pH and ionic strength of the immersion solutions, the total film thickness, and the PPV thermal conversion parameters on the photoluminescence and electroluminescence yields have been systematically studied. The ISAM process also allows the advantage of depositing well-defined thicknesses of separate polymers at the indium tin oxide and the aluminum electrode interfaces.

scholarly journals One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2563 ◽  
Author(s):  
Navid Mohammadian ◽  
Sheida Faraji ◽  
Srikrishna Sagar ◽  
Bikas C. Das ◽  
Michael L. Turner ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Low Cost ◽  
Tantalum Pentoxide ◽  
Organic Thin Film ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Saturation Field ◽  
Self Assembled

Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta2O5) as the gate dielectric. The morphology and dielectric properties of the anodized Ta2O5 films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta2O5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm2 V−1 s−1, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 103. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics.

Fabrication and Application of Nanostructures Using Gas-Assisted Hot Embossing and Self-Assembled Nanospheres

2015 ◽  
Vol 659 ◽  
pp. 399-403 ◽  
Author(s):  
Rong Hong Hong ◽  
Cheng Cih ◽  
To Chung Shu ◽  
Sen Yeu Yang
Keyword(s):  
Near Infrared ◽  
Low Cost ◽  
Hot Embossing ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Glass Substrates ◽  
Plasma Sputtering ◽  
Nanostructure Arrays ◽  
Self Assembled ◽  
Better Than

We develop a simple and competitive fabrication of antireflective (AR) films with high-ordered nanostructure arrays on polycarbonate (PC) substrate by using gas-assisted hot embossing and a self-assembled technique. In this method, a self-assembled monolayer of polystyrene (PS) nanospheres is well-patterned on glass substrates as the first template. Subsequently, we use the plasma sputtering to deposit a conductive layer onto the surface of nanosphere (NS) patterned substrates, and then, electroforming is applied to fabricate a nickel mold with an inverse shape of nanospheres. In the last step, a unique glass transition is utilized to duplicate nanostructures on PC films via gas-assisted hot embossing. Not only in visible light but in near infrared, the optical properties of this AR film are similar or better than for other methods. This fabrication process also has great potential in industry, with its simplicity, large-area but low-cost.

Self-assembled microarray of organic light-emitting diodes using a self-assembled monolayer by microcontact printing

2009 ◽  
Vol 95 (11) ◽  
pp. 113310 ◽  
Author(s):  
Tae Hyun Park ◽  
Young Min Kim ◽  
Young Wook Park ◽  
Jin Hwan Choi ◽  
Jin-Wook Jeong ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Microcontact Printing ◽  
Organic Light Emitting Diodes ◽  
Self Assembled Monolayer ◽  
Light Emitting ◽  
Organic Light ◽  
Self Assembled

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

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