A Phosphonic Acid Self-assembled Monolayer on UV-Cured Metal Oxides as Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 39 (5) ◽  
pp. 601-604
Author(s):  
Yujin Lee ◽  
Young-Geun Ha
2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.


Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...


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