scholarly journals P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 819 ◽  
Author(s):  
Wencan Li ◽  
Jiao Cui ◽  
Weiwei Wang ◽  
Dahuai Zheng ◽  
Longfei Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
Nitrogen Plasma ◽  
Si Substrate ◽  
Surface Appearance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices.

scholarly journals Titanium-Doped P-Type WO3 Thin Films for Liquefied Petroleum Gas Detection

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 727 ◽  
Author(s):  
Yuzhenghan He ◽  
Xiaoyan Shi ◽  
Kyle Chen ◽  
Xiaohong Yang ◽  
Jun Chen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Hole Concentration ◽  
Liquefied Petroleum Gas ◽  
Sem Images ◽  
X Ray ◽  
Glass Substrates ◽  
P Type ◽  
Wo3 Thin Films

Gas sensors are an important part of smart homes in the era of the Internet of Things. In this work, we studied Ti-doped P-type WO3 thin films for liquefied petroleum gas (LPG) sensors. Ti-doped tungsten oxide films were deposited on glass substrates by direct current reactive magnetron sputtering from a W-Ti alloy target at room temperature. After annealing at 450 °C in N2 ambient for 60 min, p-type Ti-doped WO3 was achieved for the first time. The measurement of the room temperature Hall-effect shows that the film has a resistivity of 5.223 × 103 Ωcm, a hole concentration of 9.227 × 1012 cm−3, and mobility of 1.295 × 102 cm2V−1s−1. X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the substitution of W6+ with Ti4+ resulted in p-type conductance. The scanning electron microscope (SEM) images show that the films consist of densely packed nanoparticles. The transmittance of the p-type films is between 72% and 84% in the visible spectra and the optical bandgap is 3.28 eV. The resistance increased when the films were exposed to the reducing gas of liquefied petroleum gas, further confirming the p-type conduction of the films. The p-type films have a quick response and recovery behavior to LPG.

Synthesis and characterization of Zn100−xLixO and Zn100−x−yLixCuyO thin films for electronic and optoelectronic applications

2019 ◽  
Vol 33 (23) ◽  
pp. 1950257
Author(s):  
R. Afrose ◽  
M. Kamruzzaman ◽  
M. N. H. Liton ◽  
M. A. Helal ◽  
M. K. R. Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Cost Effective ◽  
Optoelectronic Device ◽  
Point Of View ◽  
Chemical Spray Pyrolysis ◽  
Cu Doping ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

p-type conductivity and the modulation of bandgap of ZnO are crucial aspects for realization of optoelectronic devices’ applications. The Li and Li-Cu could be suitable doping agents for achieving the p-type conductivity and the modulation of bandgap of ZnO. To this point of view, the Zn[Formula: see text]Li[Formula: see text]O (x = 0 to 40 at.%) and Zn[Formula: see text]Li[Formula: see text]Cu[Formula: see text]O (fixed, x = 5 at.%, and y = 0.0 to 10 at.%) thin films were prepared on the microscopic glass substrates at a temperature of 350[Formula: see text]C using cost effective chemical spray pyrolysis (CSP) technique. Field emission scanning electron microscope images show the coexistence of interconnected fibrous and flat grains on the films surface. The grain size changes as function of Li- and Li-Cu concentrations, and at a higher doping granular grains are observed. The successful incorporation of Li and Cu-Li into ZnO crystal is confirmed by X-ray photoelectron spectroscopy (XPS) measurements. The X-ray diffraction (XRD) patterns exhibit hexagonal polycrystalline structure of doped ZnO. However, the crystallinity is deteriorated at higher Li- and Li-Cu doping concentrations. The optical bandgap study exhibits direct transition type and it is red shifted from 3.21 to 2.61 eV and 2.84 to 3.56 eV for Li and Li-Cu doping in ZnO thin films, respectively. The optical conductivity enhances as a result of Li- and Li-Cu doping in ZnO. Therefore, Li- and Li-Cu can effectively be doped to tune bandgap and enhance optical properties of ZnO for electronic and optoelectronic device applications.

scholarly journals X-ray Photoelectron Spectroscopy (XPS) Analysis of Undoped ZnO and ZnO:Er Thin Films

2015 ◽  
Vol 16 (1) ◽  
pp. 13
Author(s):  
Iwan Sugihartono ◽  
Esmar Budi ◽  
Agus Setyo Budi
Keyword(s):  
Thin Films ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Xps Analysis ◽  
X Ray ◽  
Si Substrates ◽  
Ultrasonic Spray ◽  
P Type

Undoped ZnO and ZnO:Er  thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy

X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films

2009 ◽  
Vol 311 (8) ◽  
pp. 2341-2344 ◽  
Author(s):  
G.D. Yuan ◽  
Z.Z. Ye ◽  
J.Y. Huang ◽  
Z.P. Zhu ◽  
C.L. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Spectroscopy Study ◽  
X Ray ◽  
P Type ◽  
Co Doped

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

Nitridation of Hafnium Silicate Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Hood Chatham ◽  
Yoshi Senzaki ◽  
Jeff Bailey ◽  
Wesley Nieveen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Nitrogen Plasma ◽  
Process Conditions ◽  
Atomic Nitrogen ◽  
Hafnium Silicate ◽  
X Ray ◽  
Nitrogen Concentrations ◽  
Nitridation Temperature

ABSTRACTWe discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.

Study on Preparation and Application Performance of P-Type Conducting SnO2 Ceramic Target

2014 ◽  
Vol 599 ◽  
pp. 338-345 ◽  
Author(s):  
Jia Miao Ni ◽  
Xiu Jian Zhao ◽  
Bin Bin Li ◽  
Min Dong Zheng ◽  
Ting Peng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
High Conductivity ◽  
Raw Material ◽  
Molding Pressure ◽  
High Quality ◽  
Rutile Structure ◽  
X Ray ◽  
And Performance ◽  
P Type

To obtain high quality SnO2 film, high conductivity and high quality SnO2 target should be obtained first. In this paper, high-conductivity Sb: SnO2 (ATO) ceramic targets were fabricated using SnO2, Sb2O3 powder as raw material. The chemical composition and morphology of SnO2 targets were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The effect of different forming pressure on the morphology and electrical properties of targets were studied in our paper. The results show that molding pressure has a significant impact on the density of ATO targets and performance during sintering process. When molding pressure is 15 Mpa, the target has the minimum resistivity for 2.38 Ωcm. XRD results show that ATO target possess tetragonal rutile structure with the preferred orientation of (101). XPS indicate that the chemical state of Sn element in the target is Sn4+ and that of Sb is Sb3+. In addition, the shrinkage rate of conductive SnO2 target is 10.34% so that target can be used to sputtering in the magnetron sputter. The preparation process is simple and cost of SnO2 target is low. The transparent conductive SnO2 thin film was successfully deposited on glass substrate with good performance of high hole concentration and low resistivity of 3.334×1019 cm-3 and 3.588 Ω·cm, respectively. The average transmission of p-type SnO2 films was above 80% in the visible light range.

Effects of Erbium alloying on the structural and piezoelectric properties of Aluminum Nitride thin films annealed under extreme thermal conditions

2013 ◽  
Vol 1519 ◽  
Author(s):  
V. Narang ◽  
D. Korakakis
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Thermal Conditions ◽  
Silicon Substrates ◽  
X Ray ◽  
Er Doping ◽  
Sputtering Power ◽  
P Type

ABSTRACTEffects of adding Erbium(Er) to Aluminum Nitride thin films on their structural and piezoelectric are reported along with stability of the films after annealing them at temperatures up to 600° C. The thin films samples were deposited on the (001) p-type silicon substrates by reactive magnetron sputtering, using the Er alloyed Aluminum targets with Er atomic concentrations of 0, 1, 3 and 4% and the magnetron sputtering power of 200 W. The samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XPS analysis was used to confirm the stoichiometry of AlN phase, Er atomic content and its possible chemical state in the films. Results show that alloying with Er results in higher piezoelectric coefficient d33 as compared to that in Er-free AlN thin films. Structural analysis of the films by XRD shows the shift of (0002) AlN peak to lower 2θ values upon Er doping, indicating the presence of uniform internal compressive stress.

Na Impurity Chemistry in Photovoltaic Cigs thin-Films: An Investigation with Photo- and Auger Electron Spectroscopies

1997 ◽  
Vol 485 ◽  
Author(s):  
D. W. Niles ◽  
K. Ramanathan ◽  
J. Granata ◽  
F. Hasoon ◽  
R. Noufi ◽  
...  
Keyword(s):  
Thin Films ◽  
Auger Electron ◽  
Chemical Nature ◽  
Atomic Percent ◽  
Device Performance ◽  
Type Conductivity ◽  
X Ray ◽  
P Type

AbstractThe incorporation of Na into Cu(Inl-xGax)Se2 thin-films is known to lead to an improvement in device performance. The authors use X-ray photoelectron and Auger electron spectroscopies to determine the chemical nature of Na in Cu(Inl-xGax)Se2 thin-films. The Na concentration is determined to be ∼ 0.1 atomic percent in the bulk of Cu(In1-xGax)Se2 thin-films. The Na is chemically bonded to Se. The authors propose a model invoking the replacement of column III elements by Na during the growth of Cu(Inl-xGax)Se2 thin-films. These Nain and NaGa defects act as acceptor states to increase the p-type conductivity of Cu(In1-xGax)Se2 thin-films.

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