scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

scholarly journals Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

2016 ◽  
Vol 19 (4) ◽  
pp. 137-146
Author(s):  
Phuc Huu Dang ◽  
Nhan Van Pham ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
Ar Gas ◽  
Optimum Annealing Temperature ◽  
Quartz Glasses ◽  
P Type ◽  
Deposited Films

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at the pressure of 4.10-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga2O3-doped SnO2 target with its resistivity, hole concentration and Hall mobility were 0,63 .cm, 3,3.1018 cm-3 and 3,01 cm2V-1s-1, respectively.

scholarly journals Studying and fabricating p - type transparent conducting antimony - doped SnO2 thin films by magnetron sputtering

2015 ◽  
Vol 18 (1) ◽  
pp. 23-33
Author(s):  
Phuc Huu Dang ◽  
Duan Van Nguyen ◽  
Vu Si Hoai Nguyen ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
The Other ◽  
Working Pressure ◽  
Rutile Structure ◽  
Different Temperatures ◽  
Ambient Gas ◽  
Optimum Annealing Temperature ◽  
P Type ◽  
Deposited Films

Sb doped tin oxide films (ATO) were fabricated on Quart glasses from (SnO2 + Sb2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar ambient gas at working pressure of 2.10-3 torr. X ray diffraction (XRD), Hall - effect measurements and UV-vis spectra were performed to characterize the deposited films. The substrate temperature of films was investigated for two ways. Films were annealed in Ar ambient gas after deposited at room temperature in one way. They were deposited directly with different temperatures in the other. It is found that the fabricated of ATO films in the first way was easier than the other. Deposited films showed p type electrical property, polycrystalline tetragonal rutile structure and their average transmittance was above 80 % in visible light range at the optimum annealing temperature of 500oC. The best electrical properties of film were obtained on 10 %wt Sb2O3 doped SnO2 target with its resistivity, hole concentration and Hall mobility are 0.55 Ω.cm, 1.2.1019 cm-3 and 0.54 cm2V-1s-1, respectively.

Study on Fabrication and Properties of Copper-Tin-Oxide Thin Films

2009 ◽  
Vol 79-82 ◽  
pp. 787-790
Author(s):  
Ti Ning ◽  
Feng Ji ◽  
Jin Ma ◽  
Zhen Guo Song ◽  
Xu An Pei ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Perovskite Structure ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Thermal Probe ◽  
P Type

Copper-tin-oxide thin films have been prepared on quartz substrates by the magnetron sputtering method. The structural,optical and electrical properties were investigated. The prepared samples were amorphous, CuSnO3 single crystalline grains with perovskite structure were observed after annealing temperature was above 530°C. The optical and electrical properties had great dependence with reactive gas pressure and annealing temperature. Thermal probe reveals p type conductivity of some samples. Keywords: Magnetron sputtering, CuSnO3, Perovskite structure

Composition-dependent structural and electrical properties of p-type SnOx thin films prepared by reactive DC magnetron sputtering: effects of oxygen pressure and heat treatment

RSC Advances ◽  
2016 ◽  
Vol 6 (75) ◽  
pp. 71757-71766 ◽  
Author(s):  
Sang Jin Han ◽  
Sungmin Kim ◽  
Joongyu Ahn ◽  
Jae Kyeong Jeong ◽  
Hoichang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Post Heat Treatment ◽  
Dc Sputtering ◽  
Partial Pressures ◽  
Structural And Electrical Properties ◽  
P Type

The composition-dependent structural and electrical properties of p-type SnOx films prepared by reactive DC sputtering at various oxygen partial pressures (PO) and post-heat treatment temperatures (TA) were investigated.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

Effect of Substrate-Target Distance on the Structure of TiCrN Films Deposited from Mosaic Target by Reactive DC Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 163-168
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Crystal Size ◽  
Target Distance ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Unbalanced Magnetron ◽  
Deposited Films

Titanium chromium nitride (TiCrN) thin films were deposited on Si substrates by reactive DC unbalanced magnetron sputtering from the Ti-Cr mosaic target. The effect of substrate-to-target distances (dst) on the structure of TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and chemical composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystal size less than 65 nm. The crystal size of all plane were in the range of 36.3 – 65.7 nm. The lattice constants were in the range of 4.169 Å to 4.229 Å. The thickness and roughness decrease from 500 nm to292 nm and 3.6 nm to 2.2 nm, respectively, with increasing the substrate-to-target distance. The chemical composition, Ti, Cr and N contents, of the as-deposited films were varied with the substrate-to-target distance. The as-deposited films showed compact columnar and dense morphology as a result of increasing the substrate-to-target distance.

Sign in / Sign up

Export Citation Format

Share Document