Effects of Erbium alloying on the structural and piezoelectric properties of Aluminum Nitride thin films annealed under extreme thermal conditions

2013 ◽  
Vol 1519 ◽  
Author(s):  
V. Narang ◽  
D. Korakakis
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Thermal Conditions ◽  
Silicon Substrates ◽  
X Ray ◽  
Er Doping ◽  
Sputtering Power ◽  
P Type

ABSTRACTEffects of adding Erbium(Er) to Aluminum Nitride thin films on their structural and piezoelectric are reported along with stability of the films after annealing them at temperatures up to 600° C. The thin films samples were deposited on the (001) p-type silicon substrates by reactive magnetron sputtering, using the Er alloyed Aluminum targets with Er atomic concentrations of 0, 1, 3 and 4% and the magnetron sputtering power of 200 W. The samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XPS analysis was used to confirm the stoichiometry of AlN phase, Er atomic content and its possible chemical state in the films. Results show that alloying with Er results in higher piezoelectric coefficient d33 as compared to that in Er-free AlN thin films. Structural analysis of the films by XRD shows the shift of (0002) AlN peak to lower 2θ values upon Er doping, indicating the presence of uniform internal compressive stress.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

scholarly journals Deposition of Nb-Si-C Thin Films by Radio Frequency Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 524
Author(s):  
Zifeng Li ◽  
Guotan Liu ◽  
Guanqi Liu ◽  
Xiaoshuo Zhu ◽  
Yudong Fu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Indentation Test ◽  
Rf Magnetron Sputtering ◽  
Max Phase ◽  
Chemical Components ◽  
X Ray ◽  
Sputtering Power

Nb-Si-C thin films were deposited onto Si(001) substrates by radio frequency (RF) magnetron sputtering using individual Nb, Si, and C targets. The effects of varying the sputtering power on the phase composition of the new thin films were studied. The structure, chemical components, and morphology of the thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. The experimental results and first-principles calculations indicate that a new MAX phase (Nb4SiC3) can be synthesized at a sputtering power of 65 W. The four-point probe test showed that the resistivity of the film containing Nb4SiC3 phase was 0.99 μΩ·m. A nano-indentation test showed that the hardness of the film containing Nb4SiC3 phase was 15 GPa, and the elastic modulus was 200 GPa.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

scholarly journals Surface Stoichiometry and Optical Properties of Cux–TiyCz Thin Films Deposited by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 551 ◽  
Author(s):  
Avishek Roy ◽  
Arun Kumar Mukhopadhyay ◽  
Sadhan Chandra Das ◽  
Gourab Bhattacharjee ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Metal Matrix ◽  
Optical Band Gap ◽  
Matrix Composites ◽  
X Ray ◽  
Peak Intensity ◽  
Ternary Carbide

Ternary carbide in metal matrix composites constitute a big challenge in the industry, and in this regard their surface treatment is one of the most important issues. Ternary carbide (CuxTiyCz, where x, y and z are integers) thin films are synthesized by magnetron sputtering and characterized with respect to the film depth. X-ray photoelectron spectroscopy (XPS) of Cu-2p and Ti-2p peaks shows the associated shake-up satellite peaks at a smaller film depth; the peak intensity is reduced at a higher depth. The relative intensity of Cu and Ti increases at a larger film depth. The optical band gap varies from 1.83 to 2.20 eV at different film depths.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

scholarly journals X-ray Photoelectron Spectroscopy (XPS) Analysis of Undoped ZnO and ZnO:Er Thin Films

2015 ◽  
Vol 16 (1) ◽  
pp. 13
Author(s):  
Iwan Sugihartono ◽  
Esmar Budi ◽  
Agus Setyo Budi
Keyword(s):  
Thin Films ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
Xps Analysis ◽  
X Ray ◽  
Si Substrates ◽  
Ultrasonic Spray ◽  
P Type

Undoped ZnO and ZnO:Er  thin films were deposited on p-type Si substrates by ultrasonic spray pyrolisis (USP). Undoped and ZnO:Er thin films have been analyzed by using X-ray Photoelectron Spectroscopy (XPS). The results show that the XPS spectrum has two Er peak at ∼157 eV and ∼168 eV. The XPS Zn 2p spectrum of undoped ZnO and ZnO:Er thin films have binding energy for Zn 2p3/2 (~ 1021 eV) and Zn 2p1/2 (~1045eV) were found no shift in binding energy after the incorporation of Er. Meanwhile, after Er incorporates into ZnO, the O 1s spectrum is composed two peak of binding energy (BE) at ~530.5eV and the shoulder about 532.5 eV.Keywords: ZnO thin films, ZnO:Er, XPS, binding energy

scholarly journals Microstructure and Mechanical Properties of TiN/TiCN/TiC Multilayer Thin Films Deposited by Magnetron Sputtering

2018 ◽  
Author(s):  
Abbas Razmi ◽  
Ruhi Yeşildal
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Titanium Carbonitride ◽  
Nanoindentation Test ◽  
Multilayer Thin Films ◽  
Test Results ◽  
X Ray ◽  
Cp Ti

Enhancement of mechanical properties by using TiN/TiCN/TiC multilayer thin films deposited on commercially pure cast Titanium (CP-Ti), Ti6Al4V and silicon (Si) substrates via magnetron sputtering technique was investigated in this study. The structural, chemical and mechanical properties of the coatings were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanoindentation and scratch test. Results of the XRD analysis showed reflections corresponded to FCC (1 1 1) cubic and polycrystalline structure for TiN/TiCN/TiC films. XPS analysis revealed formation of titanium nitride, titanium carbonitride and titanium carbide in the coatings. According to SEM images, the coatings demonstrated dense cross-sectional morphology and columnar structure as well as good adhesion to the substrate with a thickness of 1.77 μm deposited on silicon (1 0 0). Scratch and nanoindentation test results showed the best mechanical behavior for the coated Ti6Al4V substrate material with the 19.96 GPa hardness and 25 N critical load values, because of its higher hardness and toughness of substrate in compared to Cp-Ti substrate.

scholarly journals Room-Temperature Formation of Hard BCx Films by Low Power Magnetron Sputtering

2021 ◽  
Vol 11 (21) ◽  
pp. 9896
Author(s):  
Veronica Sulyaeva ◽  
Maxim Khomyakov ◽  
Marina Kosinova
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Film Properties ◽  
X Ray ◽  
Sputtering Power ◽  
Chemical States ◽  
Rf Signal ◽  
Dual Target

Boron carbide is one of the most important non-metallic materials. Amorphous BCx films were synthesized at room temperature by single- and dual-target magnetron sputtering processes. A B4C target and C target were operated using an RF signal and a DC signal, respectively. The effect of using single- and dual-target deposition and process parameters on the chemical bonding and composition of the films as well as their functional properties were characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray energy dispersive analysis, X-ray diffraction, ellipsometry, and spectrophotometry. It was found that the film properties depend on the sputtering power and the used targets. EDX data show that the composition of the samples varied from B2C to practically BC2 in the case of using an additional C target. According to the XPS data, it corresponds to the different chemical states of the boron atom. A nanoindentation study showed that the film with a composition close to B2C deposited with the highest B4C target power reached a hardness of 25 GPa and Young’s modulus of 230 GPa. The optical properties of the films also depend on the composition, so the band gap (Eg) of the BCx film varied in the range of 2.1–2.8 eV, while the Eg of the carbon-rich films decreased to 1.1 eV.

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