Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules

2017 ◽  
Author(s):  
Haoze Luo ◽  
Francesco Iannuzzo ◽  
Frede Blaabjerg ◽  
Xiang Wang ◽  
Wuhua Li ◽  
...  
Keyword(s):  
High Power ◽  
Electrical Parameter ◽  
Junction Temperature ◽  
Temperature Sensitive ◽  
Temperature Estimation ◽  
Turn On ◽  
Igbt Modules ◽  
Bus Voltage

scholarly journals In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2745
Author(s):  
Alessandro Soldati ◽  
Matteo Dalboni ◽  
Roberto Menozzi ◽  
Carlo Concari
Keyword(s):  
Junction Temperature ◽  
Controlled Environment ◽  
Temperature Sensitive ◽  
Polyimide Films ◽  
Temperature Estimation ◽  
Electric Parameter ◽  
Conventional Procedure ◽  
Thermal Chamber ◽  
Characterization Procedure

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.

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