Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

N. Nader Esfahani; R. E. Peale; W. R. Buchwald; C. J. Fredricksen; J. R. Hendrickson; J. W. Cleary

doi:10.1063/1.4813511

Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.4813511 ◽

2013 ◽

Vol 114 (3) ◽

pp. 033105 ◽

Cited By ~ 6

Author(s):

N. Nader Esfahani ◽

R. E. Peale ◽

W. R. Buchwald ◽

C. J. Fredricksen ◽

J. R. Hendrickson ◽

...

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Millimeter-wave low-noise high electron mobility transistors

IEEE Electron Device Letters ◽

10.1109/edl.1985.26219 ◽

1985 ◽

Vol 6 (10) ◽

pp. 531-533 ◽

Cited By ~ 39

Author(s):

P.C. Chao ◽

S.C. Palmateer ◽

P.M. Smith ◽

U.K. Mishra ◽

K.H.G. Duh ◽

...

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Noise ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Two-dimensional hydrodynamic simulation of High Electron Mobility Transistors using a block iterative scheme in combination with full Newton method

10.1109/icsict.1995.503360 ◽

2002 ◽

Author(s):

T. Simlinger ◽

R. Deutschmann ◽

C. Fischer ◽

H. Kosina ◽

S. Selberherr

Keyword(s):

Newton Method ◽

Electron Mobility ◽

Iterative Scheme ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Hydrodynamic Simulation ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Plasma wave electronics: terahertz sources and detectors using two dimensional electronic fluid in high electron mobility transistors

1998 IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) ◽

10.1109/thz.1998.731682 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.S. Shur ◽

J.-Q. Lu ◽

M.I. Dyakonov

Keyword(s):

Plasma Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Terahertz Sources ◽

Electron Mobility Transistors

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Plasma wave electronics: terahertz detectors and sources using two dimensional electronic fluid in high electron mobility transistors

1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings ◽

10.1109/wofe.1997.621164 ◽

2002 ◽

Author(s):

M.I. Dyakonov ◽

M.S. Shur

Keyword(s):

Plasma Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

Terahertz Detectors ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

2010 27th International Conference on Microelectronics Proceedings ◽

10.1109/miel.2010.5490501 ◽

2010 ◽

Author(s):

R. Yahyazadeh ◽

Z. Hashempour

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Effect Of Temperature ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electronic Current

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Ultra-low noise characteristics of millimeter-wave high electron mobility transistors

IEEE Electron Device Letters ◽

10.1109/55.17831 ◽

1988 ◽

Vol 9 (10) ◽

pp. 521-523 ◽

Cited By ~ 14

Author(s):

K.-H.G. Duh ◽

S.-M.J. Liu ◽

L.F. Lester ◽

P.C. Chao ◽

P.M. Smith ◽

...

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Noise ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Noise Characteristics ◽

Ultra Low Noise

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Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591133 ◽

1999 ◽

Vol 17 (6) ◽

pp. 2596 ◽

Cited By ~ 1

Author(s):

T. Hussain ◽

P. Chu ◽

C. P. Wen ◽

M. Circle ◽

A. Gomez ◽

...

Keyword(s):

Millimeter Wave ◽

Integrated Circuit ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recessed Gate ◽

Millimeter Wave Integrated Circuit

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Millimeter-wave generation by optical mixing in ultrafast high electron mobility transistors

10.1117/12.346797 ◽

1999 ◽

Author(s):

Mohammed E. Ali ◽

Daipayan Bhattacharya ◽

Hernan Erlig ◽

Harold R. Fetterman ◽

Mehran Matloubian

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Wave Generation ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Optical Mixing

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A novel metamorphic high electron mobility transistors with (InxGa1-xAs)m/(InAs)n superlattice channel layer for millimeter-wave applications

2009 Asia Pacific Microwave Conference ◽

10.1109/apmc.2009.5384333 ◽

2009 ◽

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Jung-Chi Lu ◽

Edward Yi Chang ◽

Chien Wu ◽

...

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Channel Layer ◽

Electron Mobility Transistors

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InP and GaN high electron mobility transistors for millimeter-wave applications

IEICE Electronics Express ◽

10.1587/elex.12.20152005 ◽

2015 ◽

Vol 12 (13) ◽

pp. 20152005-20152005 ◽

Cited By ~ 7

Author(s):

Tetsuya Suemitsu

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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