scholarly journals Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors

2017 ◽  
Vol 26 (6) ◽  
pp. 1319-1324
Author(s):  
Xuming Yu ◽  
Yuehang Xu ◽  
Zhang Wen ◽  
Zhikai Chen ◽  
Wei Hong
Keyword(s):  
Statistical Model ◽  
Electron Mobility ◽  
Extraction Method ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
High Electron ◽  
Large Signal ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates

2006 ◽  
Vol 955 ◽  
Author(s):  
Travis Anderson ◽  
Fan Ren ◽  
Lars Voss ◽  
Mark Hlad ◽  
Brent P Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
High Electron ◽  
High Electron Mobility ◽  
Drain Spacing ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Rf Performance ◽  
Spacing Parameter

ABSTRACTThe dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.

scholarly journals Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 7
Author(s):  
Yu-Shyan Lin ◽  
Shin-Fu Lin
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
Noise Figure ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Large Signal ◽  
High Electron Mobility ◽  
High Frequency Noise ◽  
Electron Mobility Transistors

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

2015 ◽  
Vol 36 (1) ◽  
pp. 17-19 ◽  
Author(s):  
Diego Marti ◽  
Stefano Tirelli ◽  
Valeria Teppati ◽  
Lorenzo Lugani ◽  
Jean-Francois Carlin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Large Signal ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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