scholarly journals Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits

2021 ◽  
Vol 2 (2) ◽  
pp. 60-71
Author(s):  
John Barron ◽  
Alec Pickett ◽  
James Glaser ◽  
Suchismita Guha
Keyword(s):  
Field Effect ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Operating Voltage ◽  
Solution Processed ◽  
P Type ◽  
Uv Ozone

The use of high κ dielectrics lowers the operating voltage in organic field-effect transistors (FETs). Polymer ferroelectrics open the path not just for high κ values but allow processing of the dielectric films via electrical poling. Poled ferroelectric dielectrics in p-type organic FETs was seen to improve carrier mobility and reduce leakage current when compared to unpoled devices using the same dielectric. For n-type FETs, solution-processed ZnO films provide a viable low-cost option. UV–ozone-treated ZnO films was seen to improve the FET performance due to the filling of oxygen vacancies. P-type FETs were fabricated using the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the dielectric along with a donor–acceptor polymer based on diketopyrrolopyrrole (DPP-DTT) as the semiconductor layer. The DPP-DTT FETs yield carrier mobilities upwards of 0.4 cm2/Vs and high on/off ratios when the PVDF-TrFE layer is electrically poled. For n-type FETs, UV–ozone-treated sol–gel ZnO films on SiO2 yield carrier mobilities of 10−2 cm2/Vs. DPP-DTT-based p- and ZnO-based n-type FETs were used in a complementary voltage inverter circuit, showing promising characteristic gain. A basic inverter model was used to simulate the inverter characteristics, using parameters from the individual FET characteristics.

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

Interfacial Effects of UV-Ozone Treated Sol-Gel Processable ZnO for Hybrid Photodetectors and Thin Film Transistors

MRS Advances ◽  
2019 ◽  
Vol 4 (31-32) ◽  
pp. 1793-1800 ◽  
Author(s):  
Alec Pickett ◽  
Aiswarya A. Mohapatra ◽  
Suman Ray ◽  
Christopher Robledo ◽  
Kartik Ghosh ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
High Mobility ◽  
Inorganic Materials ◽  
Zno Films ◽  
Type Semiconductor ◽  
Order Of Magnitude ◽  
Organic Photodetectors ◽  
Uv Ozone

ABSTRACTHybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning and fully solution processed devices. We report the improvement of electron mobilities in ZnO FETs through simple UV-Ozone processing which reduces lattice defects within the film and at the SiO2/ZnO interface. Treated ZnO films yield electron mobilities close to 10-2 cm2/Vs and on/off current ratios of 104 while non-treated films have mobilities on the order of 10-5 cm2/Vs and an order of magnitude lower on/off current ratios. Treated films also yield improved photoresponsivity and detectivity in hybrid ZnO-organic photodetectors.

scholarly journals Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

2018 ◽  
Vol 29 (7) ◽  
pp. 075202 ◽  
Author(s):  
Paul Giraud ◽  
Bo Hou ◽  
Sangyeon Pak ◽  
Jung Inn Sohn ◽  
Stephen Morris ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Type Solution ◽  
Solution Processed ◽  
P Type

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Volume Resistivity ◽  
Dielectric Materials ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Metal Insulator Metal

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide

2015 ◽  
Vol 17 (31) ◽  
pp. 20160-20167 ◽  
Author(s):  
Dang Xuan Long ◽  
Yong Xu ◽  
Huai-xin Wei ◽  
Chuan Liu ◽  
Yong-Young Noh
Keyword(s):  
Field Effect ◽  
Molybdenum Trioxide ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
P Type

A simply synthesized MoO3 is used as charge injection layers for printed p-type organic field-effect transistors (OFETs).

Improving device performance of n-type organic field-effect transistors via doping with a p-type organic semiconductor

2019 ◽  
Vol 7 (15) ◽  
pp. 4543-4550 ◽  
Author(s):  
Shuqiong Lan ◽  
Yujie Yan ◽  
Huihuang Yang ◽  
Guocheng Zhang ◽  
Yun Ye ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Polymer Semiconductor ◽  
P Type

The performance of solution-processed n-type OFETs was improved via a facile effective route, by blending a p-type organic semiconductor into the n-type polymer semiconductor.

Solution-Processed LiF-Doped ZnO Films for High Performance Low Temperature Field Effect Transistors and Inverted Solar Cells

2013 ◽  
Vol 5 (14) ◽  
pp. 6687-6693 ◽  
Author(s):  
Jingjing Chang ◽  
Zhenhua Lin ◽  
Chunxiang Zhu ◽  
Chunyan Chi ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Solar Cells ◽  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Films ◽  
Solution Processed ◽  
Doped Zno

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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