Solution-Processed LiF-Doped ZnO Films for High Performance Low Temperature Field Effect Transistors and Inverted Solar Cells

2013 ◽  
Vol 5 (14) ◽  
pp. 6687-6693 ◽  
Author(s):  
Jingjing Chang ◽  
Zhenhua Lin ◽  
Chunxiang Zhu ◽  
Chunyan Chi ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Solar Cells ◽  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Films ◽  
Solution Processed ◽  
Doped Zno

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

Low temperature aqueous solution-processed Li doped ZnO buffer layers for high performance inverted organic solar cells

2016 ◽  
Vol 4 (25) ◽  
pp. 6169-6175 ◽  
Author(s):  
Zhenhua Lin ◽  
Jingjing Chang ◽  
Chunfu Zhang ◽  
Jincheng Zhang ◽  
Jishan Wu ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Solar Cells ◽  
Low Temperature ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
High Performance ◽  
Photovoltaic Performance ◽  
Buffer Layers ◽  
Solution Processed ◽  
Doped Zno

An enhanced photovoltaic performance is achieved by employing a lithium doped ZnO layer as the electron buffer layer for organic solar cells.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

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