scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Precise Patterning of Single Crystal Arrays of Organic Semiconductors by Patterned Microchannel Dip-coating Method for Organic Field-Effect Transistors

2021 ◽  
Author(s):  
Chaoqiang Wang ◽  
Zhengjun Lu ◽  
Wei Deng ◽  
Wanqin Zhao ◽  
Bei Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Dip Coating ◽  
Organic Field Effect Transistors ◽  
Coating Method ◽  
Dip Coating Method

Control over the growth location and orientation of organic semiconductor single crystals (OSSCs) is of key importance to enable high-performance organic circuits. However, the previous approaches are difficult to create...

scholarly journals Correction: Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors

2018 ◽  
Vol 42 (19) ◽  
pp. 16384-16384
Author(s):  
Qian Liu ◽  
Huabin Sun ◽  
Chula Blaikie ◽  
Chiara Caporale ◽  
Sergei Manzhos ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Correction for ‘Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors’ by Qian Liu et al., New J. Chem., 2018, 42, 12374–12385.

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

2015 ◽  
Vol 3 (31) ◽  
pp. 8024-8029 ◽  
Author(s):  
Zhaoguang Li ◽  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Lei Guo ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Building Blocks ◽  
Organic Field Effect Transistors ◽  
Next Generation

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.

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