Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide

2015 ◽  
Vol 17 (31) ◽  
pp. 20160-20167 ◽  
Author(s):  
Dang Xuan Long ◽  
Yong Xu ◽  
Huai-xin Wei ◽  
Chuan Liu ◽  
Yong-Young Noh

A simply synthesized MoO3 is used as charge injection layers for printed p-type organic field-effect transistors (OFETs).

2013 ◽  
Vol 5 (9) ◽  
pp. 3716-3721 ◽  
Author(s):  
Chang Hyun Kim ◽  
Htay Hlaing ◽  
Fabio Carta ◽  
Yvan Bonnassieux ◽  
Gilles Horowitz ◽  
...  

2019 ◽  
Vol 7 (15) ◽  
pp. 4543-4550 ◽  
Author(s):  
Shuqiong Lan ◽  
Yujie Yan ◽  
Huihuang Yang ◽  
Guocheng Zhang ◽  
Yun Ye ◽  
...  

The performance of solution-processed n-type OFETs was improved via a facile effective route, by blending a p-type organic semiconductor into the n-type polymer semiconductor.


Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.


MRS Bulletin ◽  
2008 ◽  
Vol 33 (7) ◽  
pp. 676-682 ◽  
Author(s):  
Henning Sirringhaus ◽  
Masahiko Ando

AbstractOrganic field-effect transistors (FETs) are currently the focus of significant academic research and industrial development interest, as they potentially offer unique advantages over their inorganic counterparts in terms of cost reductions, compatibility with low-temperature and printing-based manufacturing, and potentially even performance. The first generation of products incorporating organic FETs is presently being introduced to the market. This article provides an overview of strategies for achieving high field-effect mobilities in solution-processed organic semiconductor films. We provide an assessment of materials challenges to meet performance and reliability requirements for a range of display and circuit applications and present an overview of state-of-the-art application demonstrations in active-matrix addressing of flexible eletrophoretic, organic light-emitting diode, and liquid-crystal displays, as well as radio-frequency identification tagging. We discuss how the unique functional properties of organic semiconductors, which allow comparatively easy integration of information processing, information storage, light emission, and light detection functions, might enable multifunctional applications that are not easy to create with other material systems.


2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...


2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  

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