GaAs Surface Passivation by InGaP Thin Film

1991 ◽  
Vol 240 ◽  
Author(s):  
Fumiaki Hyuga ◽  
Tatsuo Aoki ◽  
Suehiro Sugitani ◽  
Kazuyoshi Asai ◽  
Yoshihiro Imamura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Concentration ◽  
High Performance ◽  
Surface Passivation ◽  
Wide Bandgap ◽  
Gaas Surface ◽  
Photoluminescence Intensity ◽  
Barrier Heights ◽  
Wide Bandgap Materials

ABSTRACTInGaP thin films are evaluated as wide-bandgap materials for GaAs surface passivation. A 200-Å InGaP thin film increases GaAs photoluminescence intensity 25-fold and enables Schottky barrier heights of more than 0.6 eV on n-type GaAs layers with a carrier concentration of 3×1018 /cm3. These effects persist after annealing at 800 °C for 10 min. InGaP thin films are thus suitable as surface passivation films for high-performance GaAs-MESFETs.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

High Performance Metal Surface Coating Using Ta2O5 Thin Film Prepared by D.C. Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 240-243
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Pongpan Chindaudom ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Metal Surface ◽  
High Performance ◽  
Grazing Incidence ◽  
Surface Finishing ◽  
Afm Micrographs ◽  
Protective Performance

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

scholarly journals High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template

2020 ◽  
Vol 2 (1) ◽  
pp. 368-376 ◽  
Author(s):  
Nan Chen ◽  
Michael R. Scimeca ◽  
Shlok J. Paul ◽  
Shihab B. Hafiz ◽  
Ze Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cation Exchange ◽  
High Performance ◽  
Low Cost ◽  
Copper Selenide ◽  
Silver Selenide ◽  
Solution Processed

A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.

Fast grown self-assembled polythiophene/graphene oxide nanocomposite thin films at air–liquid interface with high mobility used in polymer thin film transistors

2018 ◽  
Vol 6 (37) ◽  
pp. 9981-9989 ◽  
Author(s):  
Nikhil Nikhil ◽  
Rajiv K. Pandey ◽  
Praveen Kumar Sahu ◽  
Manish Kumar Singh ◽  
Rajiv Prakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Device ◽  
High Mobility ◽  
Practical Application ◽  
Polymer Thin Film ◽  
Nanocomposite Thin Films ◽  
Air Liquid Interface

Successful practical application of a polymer or its nanocomposite depends on the ability to produce a high performance electronic device at a significantly lesser cost and time than those needed to manufacture conventional devices.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

Characteristics of TAA–ZnS Buffer Layer by Addition of Sodium Citrate for CIGS Thin Film Solar Cell

2020 ◽  
Vol 20 (11) ◽  
pp. 6659-6664
Author(s):  
Jeong Eun Park ◽  
So Mang Park ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Deposition Rate ◽  
Sodium Citrate ◽  
Wide Bandgap ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Citrate Concentration ◽  
Cigs Thin Film

Zinc Sulfide (ZnS) is an environmentally friendly material with a wide bandgap (Eg = 3.7 eV) comparable to that of cadmium sulfide (CdS) (2.4 eV), which is conventionally used as buffer layer in Cu(In,Ga)Se2 (CIGS) thin film solar cells. Conventional ZnS buffer layers are manufactured using thiourea, and, these layers possess a disadvantage in that their deposition rate is lower than that of CdS buffer layers. In this paper, thioacetamide (TAA) was used as a sulfur precursor instead of thiourea to increase the deposition rate. However, the ZnS thin films deposited with TAA exhibited a higher roughness than the ZnS thin films deposited with thiourea. Sodium citrate was therefore added to increase the uniformity and decrease the roughness of the former ZnS thin films. When sodium citrate was used, the thin films demonstrated a high transmittance via the controlled generation of particles. In the case of TAA–ZnS thin films doped with a sodium citrate concentration of 0.04 M, the granules on the surface disappeared and these thin films were denser than the TAA–ZnS thin films deposited with a lower sodium citrate concentration. It is considered that the rate of the ion-by-ion reaction increased due to the addition of sodium citrate, thereby resulting in a uniform thin film. Consequently, TAA–ZnS thin films with thicknesses of approximately 40 nm and high transmittances of 83% were obtained when a sodium citrate concentration of 0.04 M was used.

Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Indium Oxide Thin Film

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.

Effects of γ-Ray Irradiation on Structure and Properties of ZnO:Al Thin Film

2007 ◽  
Vol 546-549 ◽  
pp. 2137-2142 ◽  
Author(s):  
Wen Wen Wang ◽  
Tian Min Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Performance ◽  
Hall Effect Measurement ◽  
High Rate ◽  
X Ray Diffraction ◽  
Vacancy Defects ◽  
Structure Morphology ◽  
Before And After ◽  
Γ Ray

ZnO:Al(ZAO) thin film is a kind of transparent conductive functional material which has a potential application in the solar cell and Atom Oxygen resisting systems of spacecrafts. High performance ZAO thin films were prepared by reactive magnetron sputtering and then irradiated by γ-ray with different dose or rate of irradiation. The as-deposited sample and irradiated ones were characterized by X-ray Diffraction, Scanning Electron Microscopy and Hall-effect measurement to investigate the dependences of the structure, morphology and electrical properties of ZAO on the dose and rate of γ-ray irradiation. Measurement of Positron Annihilation Doppler-Broadening Spectroscopy was carried out to study the variation of the defects in ZAO thin films before and after irradiation. It is indicated that γ-ray will excite the carriers, which are electrons in ZAO. A high rate of γ-ray irradiation could slightly destroy the bonds of Zn-O and decrease the crystallinity, while the effect of low rate irradiation is similar to heat annealing and increase the crystallinity of ZAO thin films. γ-ray has no apparent influences on the negative vacancy defects in ZAO thin film.

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