Deep level defects in β-Ga2O3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques

2019 ◽  
Vol 125 (10) ◽  
pp. 105103 ◽  
Author(s):  
Buguo Wang ◽  
David Look ◽  
Kevin Leedy
1991 ◽  
pp. 1057-1060
Author(s):  
Hiroshi Fujimoto ◽  
Wataru Futo ◽  
Hideaki Higashi ◽  
Satoru Kishida ◽  
Heizo Tokutaka ◽  
...  

2007 ◽  
Vol 4 (3) ◽  
pp. 942-945 ◽  
Author(s):  
J. Pejchal ◽  
Y. Kagamitani ◽  
D. Ehrentraut ◽  
H. Sato ◽  
H. Odaka ◽  
...  

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Yaodong Yang ◽  
Zhiguang Wang ◽  
Jie-Fang Li ◽  
D. Viehland

We have studied the deposition of BaTiO3(BTO) thin films on various substrates. Three representative substrates were selected from different types of material systems: (i) SrTiO3single crystals as a typical oxide, (ii) Si wafers as a semiconductor, and (iii) Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.


Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.


2013 ◽  
Vol 7 (4) ◽  
pp. 293-296 ◽  
Author(s):  
Jr-Sheng Tian ◽  
Chun-Yen Peng ◽  
Wei-Lin Wang ◽  
Yue-Han Wu ◽  
Yi-Sen Shih ◽  
...  

1998 ◽  
Vol 541 ◽  
Author(s):  
A. M. Clark ◽  
Jianhua Hao ◽  
Weidong Si ◽  
X. X. Xi

AbstractLow frequency dielectric loss and nonlinearity in pulsed laser deposited SrTiO3 thin films were studied. A low loss tangent in the order of 10−4, close to the level found in SrTiO3 single crystals, was observed. Combined with a large tunability, this resulted in a figure of merit for frequency and phase agile materials that can rival that observed in single crystals. The SrTiO3 thin films with thickness ranging from 25 nm to 2.5μ1 were grown on SrRuO3 electrode layers. The loss depends strongly on the thickness, but differently above and below T ∼ 80 K. Our result suggests that, in the high temperature regime, the interfacial dead layer effect dominates while, in the low temperature regime, the losses related to the structural phase transition and quantum fluctuations are important. The effect of interfacial potential was studied by using different electrode materials that result in different Schottky barriers.


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