Electronic and transport properties of Li-doped NiO epitaxial thin films

2018 ◽  
Vol 6 (9) ◽  
pp. 2275-2282 ◽  
Author(s):  
J. Y. Zhang ◽  
W. W. Li ◽  
R. L. Z. Hoye ◽  
J. L. MacManus-Driscoll ◽  
M. Budde ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transport Properties ◽  
Electronic Devices ◽  
Wide Bandgap ◽  
Epitaxial Thin Films ◽  
Wide Bandgap Semiconductor ◽  
Li Doping ◽  
Work Functions ◽  
P Type

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

Electrical transport properties of Ag-doped p-type PbTe epitaxial thin films

1981 ◽  
Vol 68 (1) ◽  
pp. 227-232 ◽  
Author(s):  
A. L. Dawar ◽  
S. K. Paradkar ◽  
P. Kumar ◽  
O. P. Taneja ◽  
P. C. Mathur
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Epitaxial Thin Films ◽  
Electrical Transport Properties ◽  
P Type

Cu-based quaternary chalcogenide Cu2BaSnS4 thin films acting as hole transport layers in inverted perovskite CH3NH3PbI3 solar cells

2017 ◽  
Vol 5 (6) ◽  
pp. 2920-2928 ◽  
Author(s):  
Jie Ge ◽  
Corey R. Grice ◽  
Yanfa Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Wide Bandgap ◽  
Hole Transport ◽  
Thin Film Solar Cells ◽  
Hole Transport Layers ◽  
P Type

p-Type wide-bandgap Cu2BaSnS4 holds promise for use as hole transport material in inverted perovskite CH3NH3PbI3 thin-film solar cells.

Electrical transport properties of p-type Pb1−xCdxS epitaxial thin films

1981 ◽  
Vol 79 (2) ◽  
pp. 185-191 ◽  
Author(s):  
A.L. Dawar ◽  
O.P. Taneja ◽  
Partap Kumar ◽  
P.C. Mathur
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Epitaxial Thin Films ◽  
Electrical Transport Properties ◽  
P Type

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

Structural, magnetic, and transport properties of Fe-doped CoTiSb epitaxial thin films

2015 ◽  
Vol 118 (17) ◽  
pp. 173905 ◽  
Author(s):  
N. Y. Sun ◽  
Y. Q. Zhang ◽  
W. R. Che ◽  
J. Qin ◽  
R. Shan
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Epitaxial Thin Films

Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films

2010 ◽  
Vol 645-648 ◽  
pp. 459-462 ◽  
Author(s):  
Oliver Erlenbach ◽  
Gonzalo Gálvez ◽  
Jorge Andres Guerra ◽  
Francisco De Zela ◽  
Roland Weingärtner ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Thermal Activation ◽  
Wide Bandgap ◽  
Isochronal Annealing ◽  
Strong Increase ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

Synthesis of visible-light-absorptive and hole-transporting periodic mesoporous organosilica thin films for organic solar cells

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Visible Light ◽  
Organic Solar Cells ◽  
Mesoporous Films ◽  
Periodic Mesoporous Organosilica ◽  
Mesoporous Organosilica ◽  
Type Layer ◽  
Hole Transporting ◽  
P Type

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

CHEMICAL BATH DEPOSITION: A PROMISING TECHNOLOGY TO BUILD LOW COST SOLAR CELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Low Cost ◽  
Promising Technology ◽  
Cds Thin Films ◽  
P Type ◽  
Spectral Factor

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).

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