scholarly journals Effects of the Domain Wall Conductivity on the Domain Formation under AFM-Tip Voltages in Ion-Sliced LiNbO3 Films

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1160
Author(s):  
Radmir Gainutdinov ◽  
Tatyana Volk

The specified domain patterns were written by AFM-tip voltages in LiNbO3 films composing LNOI (LiNbO3-on-insulator). The domain wall conductivity (DWC) was estimated in the written patterns. This estimate was based on the effects of load resistors RL inserted between DWs and the ground, on the features of occurring domains. In this case, the domain formation is controlled by the ratio between RL and the DWs’ resistance RDW. Starting from the comparison of patterns appearing at different RL, the value of RDW in a specified pattern was estimated. The corresponding DWC is of σDW ≈ 10−3 (Ohm cm)−1 which exceeds the tabular bulk conductivity of LiNbO3 by no less than twelve orders of magnitude. A small DW inclination angle of (10−4)0 responsible for this DWC is not caused by any external action and characterizes the domain frontal growth under an AFM-tip voltage.

2011 ◽  
Vol 99 (25) ◽  
pp. 252107 ◽  
Author(s):  
Y. Du ◽  
X. L. Wang ◽  
D. P. Chen ◽  
S. X. Dou ◽  
Z. X. Cheng ◽  
...  

APL Materials ◽  
2017 ◽  
Vol 5 (7) ◽  
pp. 076108 ◽  
Author(s):  
G. Lindgren ◽  
C. Canalias

2020 ◽  
Vol 128 (6) ◽  
pp. 064104
Author(s):  
Maja Makarovic ◽  
Mustafa Çağri Bayir ◽  
Hana Ursic ◽  
Andraz Bradesko ◽  
Tadej Rojac

Author(s):  
Jianming Deng ◽  
Xing’an Jiang ◽  
Yanyu Liu ◽  
Wei Zhao ◽  
Gang Tang ◽  
...  

2020 ◽  
Vol 31 (1) ◽  
pp. 2005876
Author(s):  
Lisha Liu ◽  
Kun Xu ◽  
Qian Li ◽  
John Daniels ◽  
Hua Zhou ◽  
...  

2010 ◽  
Vol 105 (19) ◽  
Author(s):  
J. Seidel ◽  
P. Maksymovych ◽  
Y. Batra ◽  
A. Katan ◽  
S.-Y. Yang ◽  
...  

ACS Nano ◽  
2021 ◽  
Author(s):  
Hemaprabha Elangovan ◽  
Maya Barzilay ◽  
Jiawei Huang ◽  
Shi Liu ◽  
Shai Cohen ◽  
...  

1993 ◽  
Vol 310 ◽  
Author(s):  
W. Pompe ◽  
X. Gong ◽  
Z. Suo ◽  
J.S. Speck

AbstractTwin related domain formation is examined as a strain relaxation mechanism for a heteroepitaxial tetragonal film on a cubic substrate. Elastic relaxations are calculated for a single twin band in which the c-axis of the tetragonal domains is either related by a 90* rotation about an axis in the plane of the film or by a 90* rotation about the surface normal. In all cases, the strain energy change is evaluated for both the film and the substrate. A domain pattern map is developed that predicts single domain and multiple domain fields depending on the relative misfit strains and domain wall energy. The concept of a critical thickness, hc, for domain formation is developed. For cases in which the c-axis is rotated 90* about an axis in the plane of the film, the critical thickness depends only on the relative coherency strain between the substrate and film and the ratio of the domain wall energy to the stored elastic energy. For the case of a pattern consisting of energetically equivalent domains with the c-axis in plane, the equilibrium distance of multiple domains is derived. For such multiple domains, a minimum wall separation distance exists which depends non-linearly on the film thickness.


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