scholarly journals Domain wall conductivity in KTiOPO4 crystals

APL Materials ◽  
2017 ◽  
Vol 5 (7) ◽  
pp. 076108 ◽  
Author(s):  
G. Lindgren ◽  
C. Canalias
Keyword(s):  
Domain Wall ◽  
Wall Conductivity

scholarly journals Domain wall conductivity in oxygen deficient multiferroic YMnO3 single crystals

2011 ◽  
Vol 99 (25) ◽  
pp. 252107 ◽  
Author(s):  
Y. Du ◽  
X. L. Wang ◽  
D. P. Chen ◽  
S. X. Dou ◽  
Z. X. Cheng ◽  
...  
Keyword(s):  
Domain Wall ◽  
Single Crystals ◽  
Wall Conductivity

scholarly journals Domain wall conductivity as the origin of enhanced domain wall dynamics in polycrystalline BiFeO3

2020 ◽  
Vol 128 (6) ◽  
pp. 064104
Author(s):  
Maja Makarovic ◽  
Mustafa Çağri Bayir ◽  
Hana Ursic ◽  
Andraz Bradesko ◽  
Tadej Rojac
Keyword(s):  
Domain Wall ◽  
Wall Conductivity ◽  
Domain Wall Dynamics

scholarly journals Enhanced domain wall conductivity in photosensitive ferroelectrics Sn2P2S6 with full-visible-spectrum absorption

2021 ◽  
Author(s):  
Jianming Deng ◽  
Xing’an Jiang ◽  
Yanyu Liu ◽  
Wei Zhao ◽  
Gang Tang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Visible Spectrum ◽  
Wall Conductivity

scholarly journals Effects of the Domain Wall Conductivity on the Domain Formation under AFM-Tip Voltages in Ion-Sliced LiNbO3 Films

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1160
Author(s):  
Radmir Gainutdinov ◽  
Tatyana Volk
Keyword(s):  
Domain Wall ◽  
Inclination Angle ◽  
External Action ◽  
Domain Formation ◽  
Bulk Conductivity ◽  
Wall Conductivity

The specified domain patterns were written by AFM-tip voltages in LiNbO3 films composing LNOI (LiNbO3-on-insulator). The domain wall conductivity (DWC) was estimated in the written patterns. This estimate was based on the effects of load resistors RL inserted between DWs and the ground, on the features of occurring domains. In this case, the domain formation is controlled by the ratio between RL and the DWs’ resistance RDW. Starting from the comparison of patterns appearing at different RL, the value of RDW in a specified pattern was estimated. The corresponding DWC is of σDW ≈ 10−3 (Ohm cm)−1 which exceeds the tabular bulk conductivity of LiNbO3 by no less than twelve orders of magnitude. A small DW inclination angle of (10−4)0 responsible for this DWC is not caused by any external action and characterizes the domain frontal growth under an AFM-tip voltage.

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

2020 ◽  
Vol 31 (1) ◽  
pp. 2005876
Author(s):  
Lisha Liu ◽  
Kun Xu ◽  
Qian Li ◽  
John Daniels ◽  
Hua Zhou ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Conductivity ◽  
Self Assembled

scholarly journals Domain Wall Conductivity in La-DopedBiFeO3

2010 ◽  
Vol 105 (19) ◽  
Author(s):  
J. Seidel ◽  
P. Maksymovych ◽  
Y. Batra ◽  
A. Katan ◽  
S.-Y. Yang ◽  
...  
Keyword(s):  
Domain Wall ◽  
Wall Conductivity

scholarly journals Engineering Individual Oxygen Vacancies: Domain-Wall Conductivity and Controllable Topological Solitons

ACS Nano ◽  
2021 ◽  
Author(s):  
Hemaprabha Elangovan ◽  
Maya Barzilay ◽  
Jiawei Huang ◽  
Shi Liu ◽  
Shai Cohen ◽  
...  
Keyword(s):  
Domain Wall ◽  
Oxygen Vacancies ◽  
Topological Solitons ◽  
Wall Conductivity

Landau–Ginzburg–Devonshire Theory for Domain Wall Conduction and Observation of Microwave Conduction of Domain Walls

Domain Walls ◽  
2020 ◽  
pp. 271-292
Author(s):  
A. Tselev ◽  
A. V. Ievlev ◽  
R. Vasudevan ◽  
S. V. Kalinin ◽  
P. Maksymovych ◽  
...  
Keyword(s):  
Domain Wall ◽  
Schottky Barrier ◽  
Electrical Conduction ◽  
Ac Conductivity ◽  
Domain Walls ◽  
Strong Dependence ◽  
Charge Carriers ◽  
High Frequencies ◽  
Conduction Type ◽  
Wall Conductivity

This chapter concerns DW electrical conduction. It first addresses the phenomenology of charged domain walls in the context of a Landau-Ginzburg-Devonshire (LGD) model for the ferroelectric semiconductor with analysis of the DW conductivity associated with accumulation of charge carriers near domain walls. It is revealed that there exists an interplay between the wall type — head-to-head or tail-to-tail — and conduction type of the semiconductor ferroelectric with a strong dependence of the domain wall conductivity on the wall orientation. The chapter then reviews observations of high-frequency — in the gigahertz frequency range — ac conductivity along the nominally uncharged 180-degree domain walls in a uniaxial Pb(Zr0.2Ti0.8)O3 epitaxial film. Measurements of the conduction at high frequencies are insensitive to presence of a Schottky barrier and the electrode-ferroelectric interface.

Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals

ACS Nano ◽  
2017 ◽  
Vol 11 (5) ◽  
pp. 4816-4824 ◽  
Author(s):  
Christian Godau ◽  
Thomas Kämpfe ◽  
Andreas Thiessen ◽  
Lukas M. Eng ◽  
Alexander Haußmann
Keyword(s):  
Domain Wall ◽  
Lithium Niobate ◽  
Single Crystals ◽  
Wall Conductivity
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