Domain Formation and Domain Wall Motions in Ferroelectric BaTiO3Single Crystals

1954 ◽  
Vol 95 (3) ◽  
pp. 690-698 ◽  
Author(s):  
Walter J. Merz
Keyword(s):  
Domain Wall ◽  
Domain Formation

scholarly journals Effects of the Domain Wall Conductivity on the Domain Formation under AFM-Tip Voltages in Ion-Sliced LiNbO3 Films

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1160
Author(s):  
Radmir Gainutdinov ◽  
Tatyana Volk
Keyword(s):  
Domain Wall ◽  
Inclination Angle ◽  
External Action ◽  
Domain Formation ◽  
Bulk Conductivity ◽  
Wall Conductivity

The specified domain patterns were written by AFM-tip voltages in LiNbO3 films composing LNOI (LiNbO3-on-insulator). The domain wall conductivity (DWC) was estimated in the written patterns. This estimate was based on the effects of load resistors RL inserted between DWs and the ground, on the features of occurring domains. In this case, the domain formation is controlled by the ratio between RL and the DWs’ resistance RDW. Starting from the comparison of patterns appearing at different RL, the value of RDW in a specified pattern was estimated. The corresponding DWC is of σDW ≈ 10−3 (Ohm cm)−1 which exceeds the tabular bulk conductivity of LiNbO3 by no less than twelve orders of magnitude. A small DW inclination angle of (10−4)0 responsible for this DWC is not caused by any external action and characterizes the domain frontal growth under an AFM-tip voltage.

Energy Release Due to Domain Formation in the Strained Epitaxy of Multivariant Films

1993 ◽  
Vol 310 ◽  
Author(s):  
W. Pompe ◽  
X. Gong ◽  
Z. Suo ◽  
J.S. Speck
Keyword(s):  
Domain Wall ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
Separation Distance ◽  
Domain Formation ◽  
Domain Wall Energy ◽  
Twin Band ◽  
Multiple Domains ◽  
Multiple Domain

AbstractTwin related domain formation is examined as a strain relaxation mechanism for a heteroepitaxial tetragonal film on a cubic substrate. Elastic relaxations are calculated for a single twin band in which the c-axis of the tetragonal domains is either related by a 90* rotation about an axis in the plane of the film or by a 90* rotation about the surface normal. In all cases, the strain energy change is evaluated for both the film and the substrate. A domain pattern map is developed that predicts single domain and multiple domain fields depending on the relative misfit strains and domain wall energy. The concept of a critical thickness, hc, for domain formation is developed. For cases in which the c-axis is rotated 90* about an axis in the plane of the film, the critical thickness depends only on the relative coherency strain between the substrate and film and the ratio of the domain wall energy to the stored elastic energy. For the case of a pattern consisting of energetically equivalent domains with the c-axis in plane, the equilibrium distance of multiple domains is derived. For such multiple domains, a minimum wall separation distance exists which depends non-linearly on the film thickness.

scholarly journals Hydrogen-mediated magnetic domain formation and domain wall motion in Co30Pd70 alloy films

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Po-Chun Chang ◽  
Chak-Ming Liu ◽  
Chuan-Che Hsu ◽  
Wen-Chin Lin
Keyword(s):  
Domain Wall ◽  
Wall Motion ◽  
Magnetic Domain ◽  
Domain Wall Motion ◽  
Domain Formation ◽  
Alloy Films

Domain Formation in Synthetic Quartz

1971 ◽  
Vol 29 ◽  
pp. 156-157
Author(s):  
Joseph J. Comer
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Domain Formation ◽  
Synthetic Quartz ◽  
Transmission Electron ◽  
Black Spots ◽  
Diffraction Mode ◽  
Domain Boundaries ◽  
Kikuchi Lines ◽  
Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

Electron Microscopy of Graphite Intercalation Compounds

1982 ◽  
Vol 40 ◽  
pp. 544-545
Author(s):  
G. Timp ◽  
L. Salamanca-Riba ◽  
L.W. Hobbs ◽  
G. Dresselhaus ◽  
M.S. Dresselhaus
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
Domain Wall ◽  
Intercalation Compounds ◽  
Lattice Plane ◽  
Wall Model ◽  
Graphite Intercalation Compounds ◽  
Fundamental Symmetry ◽  
Graphite Intercalation

Electron microscopy can be used to study structures and phase transitions occurring in graphite intercalations compounds. The fundamental symmetry in graphite intercalation compounds is the staging periodicity whereby each intercalate layer is separated by n graphite layers, n denoting the stage index. The currently accepted model for intercalation proposed by Herold and Daumas assumes that the sample contains equal amounts of intercalant between any two graphite layers and staged regions are confined to domains. Specifically, in a stage 2 compound, the Herold-Daumas domain wall model predicts a pleated lattice plane structure.

The direct determination of magnetic domain wall profiles using a split detector STEM

1978 ◽  
Vol 36 (1) ◽  
pp. 466-467
Author(s):  
J.N. Chapman ◽  
P.E. Batson ◽  
E.M. Waddell ◽  
R.P. Ferrier
Keyword(s):  
Electron Microscope ◽  
Domain Wall ◽  
Transmission Electron Microscope ◽  
Domain Walls ◽  
Photographic Plate ◽  
Magnetic Domain ◽  
Direct Determination ◽  
Quantitative Information ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron

By far the most commonly used mode of Lorentz microscopy in the examination of ferromagnetic thin films is the Fresnel or defocus mode. Use of this mode in the conventional transmission electron microscope (CTEM) is straightforward and immediately reveals the existence of all domain walls present. However, if such quantitative information as the domain wall profile is required, the technique suffers from several disadvantages. These include the inability to directly observe fine image detail on the viewing screen because of the stringent illumination coherence requirements, the difficulty of accurately translating part of a photographic plate into quantitative electron intensity data, and, perhaps most severe, the difficulty of interpreting this data. One solution to the first-named problem is to use a CTEM equipped with a field emission gun (FEG) (Inoue, Harada and Yamamoto 1977) whilst a second is to use the equivalent mode of image formation in a scanning transmission electron microscope (STEM) (Chapman, Batson, Waddell, Ferrier and Craven 1977), a technique which largely overcomes the second-named problem as well.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

Some peculiarities of 180°-domain wall moticn in thin ferroelectric crystals

1983 ◽  
Vol 44 (10) ◽  
pp. 293-299 ◽  
Author(s):  
E. V. Burtsev ◽  
S. Y. Chervonobrodov
Keyword(s):  
Domain Wall ◽  
Ferroelectric Crystals

Numerical Analysis of a Magnetic Domain Wall in a Magnetic Nanocontact

2005 ◽  
Vol 29 (2) ◽  
pp. 116-119
Author(s):  
T. Komine ◽  
T. Takahashi ◽  
R. Sugita ◽  
T. Muranoi ◽  
Y. Hasegawa
Keyword(s):  
Numerical Analysis ◽  
Domain Wall ◽  
Magnetic Domain ◽  
Magnetic Domain Wall

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

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