scholarly journals Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors

2018 ◽  
Vol 8 (8) ◽  
pp. 1274 ◽  
Author(s):  
Takashi Nagase ◽  
Takeshi Hirose ◽  
Takashi Kobayashi ◽  
Rieko Ueda ◽  
Akira Otomo ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Voltage Drop ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Hole Injection ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Gate Insulators

This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high built-in electric field perpendicular to the SiO2 gate insulator surface, which results in a threshold voltage shift and enhanced hole injection compared to the treatment of phenethyltrichlorosilane (PETS) with small dipoles. Pronounced parabolic drain current‒voltage (ID‒VD) characteristics due to a space-charge limited current are observed in short-channel OFETs based on poly(3-hexylthiophene) with CPTS-treated gate insulators. CPTS treatment on short-channel OFETs based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) suppresses the nonlinear ID increase in the low VD region caused by the voltage drop at the Au/F8T2 contact. The influence of the increase in the net source-drain electric field associated with the reduced voltage drops on the channel-length dependence of the field-effect mobility of short-channel F8T2 FETs is also discussed.

scholarly journals Design of HeterojunctionTunnel Field-Effect Transistors with SiO2 isolation between Source and Drain for Low Power Application

2021 ◽  
Author(s):  
Sweta Chander ◽  
Sanjeet Kumar Sinha ◽  
Prince Kumar Singh ◽  
Ashish Kumar Singh
Keyword(s):  
Electric Field ◽  
Temperature Variation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Output Characteristics ◽  
Power Application

Abstract This paper presents a numerically simulated Ge-source based Tunnel Field Effect Transistor with (TFETs) SiO 2 segregation between the channel and drain. The developed device has been compared with conventional TFET and without isolated heterojunction TFET. The use of oxide segregation between channel and drain enhances the performance of the device in terms of ON-state current as well as subthreshold swing (SS). The electrical characteristics such as surface potential, electric field, transfer characteristics, output characteristics of the proposed device have been studied. The temperature variation of the proposed device has also been studied. The proposed device offers high ON current of 3x10 4 A, I ON /I OFF ratio of ~10 11, and enhanced SS of 30 mV/dec. The validity of the proposed device has been done by Synopsys Sentaurus TCAD.

Fabrication of 0.1 µm channel diamond Metal-Insulator-Semiconductor Field-Effect Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshikazu Ohba ◽  
Hiroaki Ishizaka ◽  
Takuya Arima ◽  
Hirotada Taniuchi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Voltage Shift ◽  
Effect Transistor

ABSTRACTAnalysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope S by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 µm FET with thin gate insulator 15 nm in thickness.

scholarly journals USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE

2021 ◽  
Vol 9 (11) ◽  
pp. 1095-1101
Author(s):  
Debabrata Bhadra ◽  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Capacitance Density

Thin-film transistor (TFT) with various layers of crystalline Poly-vinylidene fluoride (PVDF)/CuO percolative nanocomposites based on Anthracene as a gate dielectric insulator have been fabricated. A device with excellent electrical characteristics at low operating voltages (<1V) has been designed. Different layers (L) of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constants (εr). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films have been investigated. This device was showed highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of -1.6V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such a High-ε three layered (3L) PVDF/CuO gate dielectric appears to be highly promising candidates for organic non-volatile memory, sensor and field-effect transistors (FETs).

Sub-threshold-like charge transport in organic field effect transistor: A study on effective channel thickness

2015 ◽  
Vol 29 (28) ◽  
pp. 1550172
Author(s):  
A. K. Kavala ◽  
A. K. Mukherjee
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Thermionic Emission ◽  
Drain Current ◽  
Channel Length ◽  
Hole Injection ◽  
Emission Model ◽  
Short Channel ◽  
Channel Thickness ◽  
Effective Channel

A short channel organic field effect transistors (OFET) based on Pentacene, having channel length in the range of sub-micrometer, has been numerically modelled for low values of drain voltage. The output characteristics show a nonlinear concave increase of drain current for all values of gate voltages. This anomalous current-voltage behavior, which resembles sub-threshold characteristics of silicon FETs, shows a good match with earlier experimental reports on OFET at low drain voltages. The sub-threshold-like characteristics has been interpreted in light of thermionic-emission model because of the presence of hole injection barrier at drain (gold)/Pentacene interface. The associated analysis has facilitated to obtain a significant parameter, effective channel thickness [Formula: see text], for the first time in case of OFETs. It came out to be roughly 4 nm and 8 nm for experimental devices of poly(3-hexylthiophene-2,5-diyl) and Pentacene, respectively, while the numerically modelled device yielded a value of about 60 nm. Increase of [Formula: see text] with transverse gate electric field is also observed. Physical explanation of the observations is also presented.

Time-evolution of the electrical characteristics of MoS2 field-effect transistors after electron beam irradiation

2018 ◽  
Vol 20 (14) ◽  
pp. 9038-9044 ◽  
Author(s):  
Ming-Yen Lu ◽  
Shang-Chi Wu ◽  
Hsiang-Chen Wang ◽  
Ming-Pei Lu
Keyword(s):  
Electron Beam ◽  
Time Evolution ◽  
Threshold Voltage ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Beam Irradiation ◽  
Threshold Voltage Shift ◽  
First Time

The mechanisms of threshold voltage shift evolution of MoS2 FETs after electron beam irradiation were demonstrated experimentally for the first time.

scholarly journals Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

2004 ◽  
Vol 96 (11) ◽  
pp. 6431-6438 ◽  
Author(s):  
K. P. Pernstich ◽  
S. Haas ◽  
D. Oberhoff ◽  
C. Goldmann ◽  
D. J. Gundlach ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift
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