scholarly journals Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

2004 ◽  
Vol 96 (11) ◽  
pp. 6431-6438 ◽  
Author(s):  
K. P. Pernstich ◽  
S. Haas ◽  
D. Oberhoff ◽  
C. Goldmann ◽  
D. J. Gundlach ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift

scholarly journals Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Small ◽  
2011 ◽  
Vol 8 (2) ◽  
pp. 241-245 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Anne-Marije Andringa ◽  
W. S. Christian Roelofs ◽  
Alfred Neuhold ◽  
Martijn Kemerink ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Self Assembled Monolayers ◽  
Organic Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Assembled Monolayers ◽  
Self Assembled

Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation

2008 ◽  
Vol 47 (4) ◽  
pp. 3189-3192 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift

scholarly journals The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gamma Ray Irradiation

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

Fabrication of 0.1 µm channel diamond Metal-Insulator-Semiconductor Field-Effect Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshikazu Ohba ◽  
Hiroaki Ishizaka ◽  
Takuya Arima ◽  
Hirotada Taniuchi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Voltage Shift ◽  
Effect Transistor

ABSTRACTAnalysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope S by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 µm FET with thin gate insulator 15 nm in thickness.

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