Time-evolution of the electrical characteristics of MoS2 field-effect transistors after electron beam irradiation

2018 ◽  
Vol 20 (14) ◽  
pp. 9038-9044 ◽  
Author(s):  
Ming-Yen Lu ◽  
Shang-Chi Wu ◽  
Hsiang-Chen Wang ◽  
Ming-Pei Lu
Keyword(s):  
Electron Beam ◽  
Time Evolution ◽  
Threshold Voltage ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Beam Irradiation ◽  
Threshold Voltage Shift ◽  
First Time

The mechanisms of threshold voltage shift evolution of MoS2 FETs after electron beam irradiation were demonstrated experimentally for the first time.

scholarly journals Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molybdenum Disulfide ◽  
Field Emission ◽  
Electric Fields ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Back Gate

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.

Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation

2021 ◽  
Author(s):  
Antonio Di Bartolomeo ◽  
Alessandro Grillo ◽  
Aniello Pelella ◽  
Enver Faella ◽  
Maurizio Passacantando ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Beam Irradiation ◽  
Channel Properties

Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2 Field Effect Transistors

2018 ◽  
Vol 72 (10) ◽  
pp. 1203-1208 ◽  
Author(s):  
Barbara Yuri Choi ◽  
Kyungjune Cho ◽  
Jinsu Pak ◽  
Tae-Young Kim ◽  
Jae-Keun Kim ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Beam Irradiation

scholarly journals Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides

2020 ◽  
Vol 10 (17) ◽  
pp. 5840
Author(s):  
Antonio Di Bartolomeo ◽  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Francesca Urban ◽  
Filippo Giubileo
Keyword(s):  
Electron Beam ◽  
Transition Metal ◽  
Transport Properties ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Gas Absorption ◽  
Two Dimensional ◽  
Beam Irradiation ◽  
Type Conduction

In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum disulfide (MoS2). The effects of the environment (pressure, gas type, electron beam irradiation) on the electrical properties are the subject of an intense experimental study that evidences how PdSe2-based devices can be reversibly tuned from a predominantly n-type conduction (under high vacuum) to a p-type conduction (at atmospheric pressure) by simply modifying the pressure. Similarly, we report that, in MoS2-based devices, the transport properties are affected by pressure and gas type. In particular, the observed hysteresis in the transfer characteristics is explained in terms of gas absorption on the MoS2 surface due to the presence of a large number of defects. Moreover, we demonstrate the monotonic (increasing) dependence of the width of the hysteresis on decreasing the gas adsorption energy. We also report the effects of electron beam irradiation on the transport properties of two-dimensional field-effect transistors, showing that low fluences of the order of few e-/nm2 are sufficient to cause appreciable modifications to the transport characteristics. Finally, we profit from our experimental setup, realized inside a scanning electron microscope and equipped with piezo-driven nanoprobes, to perform a field emission characterization of PdSe2 and MoS2 nanosheets at cathode–anode separation distances as small as 200 nm.

Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation

2008 ◽  
Vol 47 (4) ◽  
pp. 3189-3192 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift

scholarly journals The gamma-ray irradiation sensitivity and dosimetric information instability of RADFET dosimeter

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gamma Ray Irradiation

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

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