The electrical characteristics of pentacene-based organic field-effect transistors with polymer gate insulators

2005 ◽  
Vol 5 (4) ◽  
pp. 297-301 ◽  
Author(s):  
G.-W. Kang ◽  
K.-M. Park ◽  
J.-H. Song ◽  
C.H. Lee ◽  
D.H. Hwang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Gate Insulators

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

Deoxyribonucleic acid-ceramic hybrid dielectrics for potential application as gate insulators in organic field effect transistors

2013 ◽  
Vol 103 (11) ◽  
pp. 113701 ◽  
Author(s):  
Fahima Ouchen ◽  
Narayanan Venkat ◽  
Donna M. Joyce ◽  
Kristi M. Singh ◽  
Steven R. Smith ◽  
...  
Keyword(s):  
Potential Application ◽  
Field Effect ◽  
Deoxyribonucleic Acid ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators

High-k polymeric gate insulators for organic field-effect transistors

2019 ◽  
Vol 30 (20) ◽  
pp. 202002 ◽  
Author(s):  
Haiyang Yu ◽  
Yihang Chen ◽  
Huanhuan Wei ◽  
Jiangdong Gong ◽  
Wentao Xu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators ◽  
High K

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process

RSC Advances ◽  
2015 ◽  
Vol 5 (20) ◽  
pp. 15695-15699 ◽  
Author(s):  
Sheng Sun ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Hua Xu ◽  
...  
Keyword(s):  
Thin Layer ◽  
Electrochemical Oxidation ◽  
Field Effect ◽  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
High Reliability ◽  
Organic Field Effect Transistors ◽  
Electrical Stability ◽  
Gate Insulators

Flexible OFETs with electrochemically oxidized gate insulators (AlOx:Nd) covered by a thin layer of Cytop were fabricated on a PEN substrate. The device exhibited higher mobility and better electrical stability.

High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

2010 ◽  
Vol 96 (10) ◽  
pp. 103307 ◽  
Author(s):  
Youn Sun Kim ◽  
Ki Hwa Jung ◽  
U Ra Lee ◽  
Kyung Hwan Kim ◽  
Mai Ha Hoang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors ◽  
Gate Insulators

Comparison of Electronic Parameters of Low Voltage Organic Field-Effect Transistors with Novel Gel Gate Insulators

2019 ◽  
Vol 14 (6) ◽  
pp. 833-838
Author(s):  
Tayfun Yardım ◽  
Ahmet Demir ◽  
Sema Allı ◽  
Abdülkadir Allı ◽  
Arif Kösemen ◽  
...  
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators ◽  
Electronic Parameters
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