scholarly journals Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy

2008 ◽  
Author(s):  
Wicaksono Satrio
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dilute Nitride

Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy

1988 ◽  
Vol 53 (12) ◽  
pp. 1071-1073 ◽  
Author(s):  
J. De Boeck ◽  
J. B. Liang ◽  
K. Deneffe ◽  
J. Vanhellemont ◽  
D. J. Arent ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Molecular Beam

Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy

1989 ◽  
Author(s):  
D. Biswas ◽  
J-I Chyi ◽  
H Morkoc ◽  
S. DiVita ◽  
G. Kordas
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

scholarly journals Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

2014 ◽  
Vol 105 (7) ◽  
pp. 072107 ◽  
Author(s):  
S. Sukrittanon ◽  
A. Dobrovolsky ◽  
Won-Mo Kang ◽  
Ja-Soon Jang ◽  
Bong-Joong Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Core Shell ◽  
Dilute Nitride ◽  
Gas Source ◽  
Shell Nanowires

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area
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