Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
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2016 ◽
Vol 34
(2)
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pp. 02L108
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2015 ◽
Vol 30
(10)
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pp. 105036
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2014 ◽
Vol 31
(7)
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pp. 078103
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2017 ◽
Vol 463
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pp. 10-13
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