Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy

1989 ◽  
Author(s):  
D. Biswas ◽  
J-I Chyi ◽  
H Morkoc ◽  
S. DiVita ◽  
G. Kordas
1988 ◽  
Vol 53 (12) ◽  
pp. 1071-1073 ◽  
Author(s):  
J. De Boeck ◽  
J. B. Liang ◽  
K. Deneffe ◽  
J. Vanhellemont ◽  
D. J. Arent ◽  
...  

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  

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