scholarly journals Structures and Electrical Properties of Tin Doped Indium Oxide (ITO) Films Deposited on Different Substrates by Sputtering with H2O Introduction

Shinku ◽  
2004 ◽  
Vol 47 (11) ◽  
pp. 796-801 ◽  
Author(s):  
Eriko NISHIMURA ◽  
Hideki OHKAWA ◽  
Yasushi SATO ◽  
Pung-Keun SONG ◽  
Yuzo SHIGESATO
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Ito Films

scholarly journals Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 310 ◽  
Author(s):  
Shang-Chou Chang ◽  
Huang-Tian Chan
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Gas Flow ◽  
Light Transmission ◽  
Nitrogen Plasma ◽  
Aluminum Doped Zinc Oxide ◽  
Plasma Annealing ◽  
N2 Plasma ◽  
Ito Films

Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/N2) plasma with different N2 flows. The structure and optical and electrical properties of AZO/ITO films were surveyed. Experiment results indicated that N2 flow in H2/N2 plasma annealing of AZO/ITO films slightly modified the structure and electrical properties of AZO/ITO films. The X-ray diffraction peak corresponding to zinc oxide (002) crystal plane slightly shifted to a higher angle and its full width at half maximum decreased as the N2 flow increased. The electrical resistivity and the emissivity reduced for the plasma annealed AZO/ITO films when the N2 flow was raised. The optimum H2/N2 gas flow was 100/100 for plasma annealed AZO/ITO films in this work for low emissivity application. The emissivity and average visible transmittance for H2/N2 = 100/100 plasma annealed AZO/ITO were 0.07 and 80%, respectively, lying in the range of commercially used low emissivity glass.

Application of Ethanolamine Method FOB the Preparation of Indium Oxide-Based Sols And Films

1992 ◽  
Vol 271 ◽  
Author(s):  
Yasutaia Taiahashi ◽  
Hideo Hayashi ◽  
Yutaka Ohya
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Dip Coating ◽  
Optical And Electrical Properties ◽  
Ito Film ◽  
Ito Films

ABSTRACTIt is found that ethanolamine method, recently developed by us, is very useful to form stable, concentrated (0.4–0.5M) indium oxide-based sols from which very uniform, transparent In2O3 and ITO films are obtained by dip-coating. Indium isopropoxide and acetate can be used as the starting materials. The optical and electrical properties of these films were examined. A transparent ITO film with the highest conductivity (3030 S/cm, after annealing at 0.05 torr-600°C for 60 min) was obtained from the acetate at 600°C. The films from the alkoxide had lower conductivities probably due to the impurities included in the alkoxide.

Influence of the initial layers on the optical and electrical properties of ITO films

2001 ◽  
Vol 17 (1-2) ◽  
pp. 291-294 ◽  
Author(s):  
A. Amaral ◽  
P. Brogueira ◽  
C. Nunes de Carvalho ◽  
G. Lavareda
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Initial Layers ◽  
Ito Films

Photoluminescence and electrical properties of erbium‐doped indium oxide films prepared by rf sputtering

1994 ◽  
Vol 76 (12) ◽  
pp. 8209-8211 ◽  
Author(s):  
Hong Koo Kim ◽  
Cheng Chung Li ◽  
Gerald Nykolak ◽  
Philippe C. Becker
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Oxide Films ◽  
Rf Sputtering ◽  
Erbium Doped ◽  
Indium Oxide Films

Study on the electrical properties of ITO films deposited by facing target sputter deposition

2009 ◽  
Vol 42 (7) ◽  
pp. 075412 ◽  
Author(s):  
Youn J Kim ◽  
Su B Jin ◽  
Sung I Kim ◽  
Yoon S Choi ◽  
In S Choi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sputter Deposition ◽  
Ito Films
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