Application of Ethanolamine Method FOB the Preparation of Indium Oxide-Based Sols And Films

1992 ◽  
Vol 271 ◽  
Author(s):  
Yasutaia Taiahashi ◽  
Hideo Hayashi ◽  
Yutaka Ohya

ABSTRACTIt is found that ethanolamine method, recently developed by us, is very useful to form stable, concentrated (0.4–0.5M) indium oxide-based sols from which very uniform, transparent In2O3 and ITO films are obtained by dip-coating. Indium isopropoxide and acetate can be used as the starting materials. The optical and electrical properties of these films were examined. A transparent ITO film with the highest conductivity (3030 S/cm, after annealing at 0.05 torr-600°C for 60 min) was obtained from the acetate at 600°C. The films from the alkoxide had lower conductivities probably due to the impurities included in the alkoxide.

2013 ◽  
Vol 684 ◽  
pp. 279-284 ◽  
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Ru Yuan Yang

In this paper, the Indium Tin Oxide (ITO) thin films were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N2 and 96.25%N2+3.75%H2). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.


2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ru-Yuan Yang ◽  
Cheng-Jye Chu ◽  
Yu-Ming Peng ◽  
Hui-Ju Chueng

Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780 nm) is 85.6%, and the best resistivity is5×10−2 Ω-cm when annealed at 600°C in 3% H2/97% N2mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600°C in 3% H2/97% N2mixtures atmosphere, causing the poor conductivity.


2001 ◽  
Vol 17 (1-2) ◽  
pp. 291-294 ◽  
Author(s):  
A. Amaral ◽  
P. Brogueira ◽  
C. Nunes de Carvalho ◽  
G. Lavareda

Shinku ◽  
2004 ◽  
Vol 47 (11) ◽  
pp. 796-801 ◽  
Author(s):  
Eriko NISHIMURA ◽  
Hideki OHKAWA ◽  
Yasushi SATO ◽  
Pung-Keun SONG ◽  
Yuzo SHIGESATO

2012 ◽  
Vol 38 ◽  
pp. S613-S616 ◽  
Author(s):  
Y. Seki ◽  
Y. Sawada ◽  
M.H. Wang ◽  
H. Lei ◽  
Y. Hoshi ◽  
...  

1998 ◽  
Vol 326 (1-2) ◽  
pp. 72-77 ◽  
Author(s):  
M Bender ◽  
W Seelig ◽  
C Daube ◽  
H Frankenberger ◽  
B Ocker ◽  
...  

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