Abstract
At present various oxide of metal semiconductors play significant role in the field of electronics device. Most of the semiconductor devices exploit the special characteristics of the junction between a p-type and n-type semiconductor, these devices can be made extremely small in size and they are incredibly fast in their response. Generally metal have good reflectivity in the electromagnetic region of infrared and visible radiation. Indium oxide material doped with tin (ITO) are recently used in the substrate material for various applications, because of it has special properties are low resistivity and high optical transmittance in the visible region. In this paper, we prepare ITO films with different tin concentration (5%, 10%, 30%, 50% and 70%) using acrylamide sol gel dip coated method and its results were reported. TCO materials have good electrical conductivity and optical transparency, and also it has n-type semiconductor with a band gap between 3.5 and 4.3 eV. An X-ray study indicates all the prepared samples were bixbyte structure. Optical behaviour of materials can be understood in the near infrared and visible spectrum. Some optical parameters refractive index, extinction coefficient and dielectric constant of ITO films are calculated from the data received from the UV transmission studies. Using W-D model the dispersion of refractive index was calculated. The optical band gap, oscillator energy, dispersion energy and optical conductivity and N/m* ratio were estimated and this material is well suitable for dye sensitized solar cell and sensor application.
Structures and Electrical Properties of Tin Doped Indium Oxide (ITO) Films Deposited on Different Substrates by Sputtering with H2O Introduction