Lamellar and Grain Boundary Models for the Electrical Properties of Post-Oxidized ITO Films

1983 ◽  
Vol 22 (Part 1, No. 4) ◽  
pp. 615-620 ◽  
Author(s):  
Mamoru Mizuhashi
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Ito Films

scholarly journals Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5+

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3294
Author(s):  
Jakkree Boonlakhorn ◽  
Jedsada Manyam ◽  
Pornjuk Srepusharawoot ◽  
Sriprajak Krongsuk ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Potential Barrier ◽  
Charge Compensation ◽  
Solid State Reaction Method ◽  
Wide Frequency Range ◽  
Potential Barrier Height

The effects of charge compensation on dielectric and electrical properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics (x = 0−0.05) prepared by a solid-state reaction method were studied based on the configuration of defect dipoles. A single phase of CaCu3Ti4O12 was observed in all ceramics with a slight change in lattice parameters. The mean grain size of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics was slightly smaller than that of the undoped ceramic. The dielectric loss tangent can be reduced by a factor of 13 (tanδ ~0.017), while the dielectric permittivity was higher than 104 over a wide frequency range. Impedance spectroscopy showed that the significant decrease in tanδ was attributed to the highly increased resistance of the grain boundary by two orders of magnitude. The DFT calculation showed that the preferential sites of Al and Nb/Ta were closed together in the Ti sites, forming self-charge compensation, and resulting in the enhanced potential barrier height at the grain boundary. Therefore, the improved dielectric properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics associated with the enhanced electrical properties of grain boundaries. In addition, the non-Ohmic properties were also improved. Characterization of the grain boundaries under a DC bias showed the reduction of potential barrier height at the grain boundary. The overall results indicated that the origin of the colossal dielectric properties was caused by the internal barrier layer capacitor structure, in which the Schottky barriers at the grain boundaries were formed.

Influence of the initial layers on the optical and electrical properties of ITO films

2001 ◽  
Vol 17 (1-2) ◽  
pp. 291-294 ◽  
Author(s):  
A. Amaral ◽  
P. Brogueira ◽  
C. Nunes de Carvalho ◽  
G. Lavareda
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Initial Layers ◽  
Ito Films

scholarly journals Microstructure and Electrical Properties of Low-Voltage Barium Titanate Doped Zinc Oxide Varistor Ceramics

2019 ◽  
Vol 8 (4) ◽  
pp. 2713-2718
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Barium Titanate ◽  
Grain Boundary ◽  
Barrier Height ◽  
Current Density ◽  
Low Voltage ◽  
X Ray ◽  
Highly Nonlinear ◽  
Zno Varistors

In the present, varistor ceramics through the combination of zinc oxide (ZnO) with a perovskite material have become widespread because of their unique properties for a wide range of applications in electronic protection devices. Low-voltage zinc oxide (ZnO) varistors with fast response and highly nonlinear electrical properties for overvoltage protection in an integrated circuit are increasingly significant in the application of low-voltage electronics. The present study highlights the interaction between barium titanate (BaTiO3 ) and ZnO varistors through the employment of solid-state reaction method in the production of low-voltage varistors. The effects of BaTiO3 on the microstructure of ZnO varistors were analyzed through scanning electron microscopy (SEM), energy dispersive X-ray analysis spectroscopy (EDS) and X-ray diffraction (XRD). The EDS analysis and XRD measurements suggest the presence of ZnO and BaTiO3 phases. The electrical properties of BaTiO3 -doped ZnO varistors were examined based on the current density-electric field (J-E) characteristics measurement. The varistor properties showed the nonlinear coefficient (α) from 1.8 to 4.8 with the barrier height (φB) ranged from 0.70 to 0.88 eV. The used of BaTiO3 additive in ZnO varistors produced varistor voltages of 4.7 to 14.1 V/mm with the voltage per grain boundary (Vgb) was measured in the ranges 0.03 to 0.05 V. The lowest leakage current density was 348 µA/cm2 , obtained at the samples containing 12 wt.% BaTiO3 with high barrier height. The reduction in barrier height with increasing BaTiO3 content was associated with the excessive amount of BaTiO3 phase, hence cause the deterioration of active grain boundary due to the variation of oxygen (O) vacancies in the grain boundary.

Grain Boundary Structure and Electrical Properties in Nb-Doped SrTiO3 Bicrystals

2000 ◽  
Vol 181-182 ◽  
pp. 225-230 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Katsuro Hayashi ◽  
Yuichi Ikuhara ◽  
Taketo Sakuma
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Boundary Structure ◽  
Grain Boundary Structure

Effect of TiO2 Nanoparticle on the Structural and Electrical Properties of Nd0.67Sr0.33MnO3 /TiO2 Composites

2021 ◽  
Vol 317 ◽  
pp. 60-65
Author(s):  
Kean Pah Lim ◽  
Lik Nguong Lau ◽  
Amirah Natasha Ishak ◽  
Mohd Mustafa Awang Kechik ◽  
Soo Kien Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Double Exchange ◽  
Secondary Phase ◽  
Solid State Reaction Method ◽  
Peak Shift ◽  
Boundary Region ◽  
Structural And Electrical Properties ◽  
Xrd Patterns ◽  
Grain Surface

In this work, (1-x) (Nd0.67Sr0.33MnO3): x (TiO2) composites with x = 0, 0.1, 0.2, 0.3 and 0.4 have been prepared to investigate the structural and electrical properties. Nd0.67Sr0.33MnO3 (NSMO) was synthesised via the solid-state reaction method before incorporated with TiO2. The addition of TiO2 nanoparticle as the secondary phase in manganite composite would favour the spin-polarized tunnelling near to the grain boundary and thus enhance the extrinsic magnetoresistance. Nevertheless, nanoparticle addition might contribute to substitution and diffusion with manganite compound as reported in literature. The effect of the TiO2 nanoparticle addition into NSMO composites has been examined by an X-ray diffractometer (XRD) and a four-point probe (4PP) system. From the thermogravimetric analysis (TGA), NSMO phase formation occurred in between 756.45 - 977.59 °C. XRD patterns showed that there is no peak shift when the TiO2 concentration increases. It can be deduced that TiO2 was segregated at the NSMO grain boundary region and its grain surface. However, a small amount of Ti atoms are expected to replace the Mn atoms in NSMO crystal system and has caused the increase in crystallite size. The electrical study showed that the presence of TiO2 nanoparticle and substitution of Ti in Mn sites have weaken the double exchange (DE) mechanism and suppressed the metal-insulator transition temperature (TMI). In addition, the insulating behaviour of TiO2 has also caused the resistivity of composites to increase drastically.

Study on the electrical properties of ITO films deposited by facing target sputter deposition

2009 ◽  
Vol 42 (7) ◽  
pp. 075412 ◽  
Author(s):  
Youn J Kim ◽  
Su B Jin ◽  
Sung I Kim ◽  
Yoon S Choi ◽  
In S Choi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sputter Deposition ◽  
Ito Films

scholarly journals Structures and Electrical Properties of Tin Doped Indium Oxide (ITO) Films Deposited on Different Substrates by Sputtering with H2O Introduction

Shinku ◽  
2004 ◽  
Vol 47 (11) ◽  
pp. 796-801 ◽  
Author(s):  
Eriko NISHIMURA ◽  
Hideki OHKAWA ◽  
Yasushi SATO ◽  
Pung-Keun SONG ◽  
Yuzo SHIGESATO
Keyword(s):  
Electrical Properties ◽  
Indium Oxide ◽  
Ito Films

Method of High Active Preparation and Electrical Properties of CuFeO2 Delafossite-Type

2014 ◽  
Vol 979 ◽  
pp. 302-306 ◽  
Author(s):  
Chalermpol Rudradawong ◽  
Aree Wichainchai ◽  
Aparporn Sakulkalavek ◽  
Yuttana Hongaromkid ◽  
Chesta Ruttanapun
Keyword(s):  
Crystal Structure ◽  
Electrical Conductivity ◽  
Solid State ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Metal Powders ◽  
High Power Factor

In this paper, the CuFeO2compound were prepared by classical solid state reaction (CSSR) and direct powder dissolved solution (DPDS) method from starting material metal oxides and metal powders. Preparation of two methods shows that, direct powder dissolved solution faster recover phases than classical solid state reaction method. The fastest method gets from starting materials Cu and Fe metal powders, the electrical conductivity, Seebeck coefficient, carrier concentration and mobility are 10.68 S/cm, 244.59 μV/K, 12.86×1016cm-3and 494.96 cm2/V.s, respectively. In addition, each CuFeO2compounds were investigated on crystal structure and electrical properties. From XRD and SEM results, all samples have a crystal structure delafossite-typeand a large grain boundary more than 15 μm by electrical conductivity corresponds to grain boundary and lattice parameter: a increases. Within this paper, from above results exhibit that preparation CuFeO2from Cu and Fe by direct powder dissolved solution method most appropriate for thermoelectric oxide materials due to high active for preparation else high lattice strain and high power factor are 0.00052 and 0.64×10-4W/mK2, respectively.

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