scholarly journals Excimer laser Annealing of Ion-implanted SiC and Suppression of Implantation-induced Damage by Simultaneous Excimer laser Irradiation During Ion Implantation.

Shinku ◽  
2001 ◽  
Vol 44 (4) ◽  
pp. 451-455
Author(s):  
Yuji HISHIDA ◽  
Jun KUDO ◽  
Masanori WATANABE
Keyword(s):  
Ion Implantation ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Excimer Laser Irradiation ◽  
Ion Implanted

UV Photoannealing and RTP of Thin Sol-Gel Films

1996 ◽  
Vol 429 ◽  
Author(s):  
R. E.Van de Leest ◽  
F. Roozeboom
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
High Quality ◽  
Iron Nickel ◽  
Excimer Laser Irradiation ◽  
Alkoxide Precursor ◽  
Sol Gel Films

AbstractVarious annealing methods for sol-gel films have been investigated. Thermal, photothermal, RTP and excimer laser annealing have been used to convert sol-gel precursor films into oxidic films. RTP annealing of sol-gel films yields better results than classical thermal annealing or excimer laser irradiation. Photochemical effects during RTP annealing contribute to obtain high-quality oxide films. The various annealing methods are illustrated by the annealing of alkoxide precursor films of tantalum, iron, nickel and yttrium.

Characterization of excimer laser annealing of ion implanted Si

1982 ◽  
Vol 3 (10) ◽  
pp. 280-283 ◽  
Author(s):  
R.T. Young ◽  
G.A. van der Leeden ◽  
J. Narayan ◽  
W.H. Christie ◽  
R.F. Wood ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Implanted

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

2003 ◽  
Vol 208-209 ◽  
pp. 292-297 ◽  
Author(s):  
C. Dutto ◽  
E. Fogarassy ◽  
D. Mathiot ◽  
D. Muller ◽  
P. Kern ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Long Pulse ◽  
Ion Implanted

High-Performance Poly-Si TFTs with Multiple Selectively Doped Regions in the Active Layer

2000 ◽  
Vol 621 ◽  
Author(s):  
Min-Cheol Lee ◽  
Juhn-Suk Yoo ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Channel Length ◽  
Depletion Region ◽  
Excimer Laser Annealing ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

ABSTRACTWe have proposed and fabricated a new poly-Si TFT that employs selectively doped regions between the source and drain in order to reduce leakage current without the sacrifice of the on current. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of source/drain, reduce the effective channel length during the on state. Under the off state, the selectively doped regions may reduce the lateral electric field induced in the depletion region near drain so that the leakage current reduces considerably. The experimental data of the proposed TFT shows that it has the high on-current, low leakage current and low threshold voltage when compared with conventional TFT. The fabrication steps for the proposed TFT are reduced because ion-implantation for source/drain and selectively doped regions is performed simultaneously prior to an excimer laser irradiation. It should be noted that, in the proposed TFT, only one excimer laser annealing is required while two excimer laser annealing steps are required in conventional TFT.

Ultrashallow P+/n junction formed by B[sub 18]H[sub 22]+] Ion Implantation and Excimer Laser Annealing

2006 ◽  
Author(s):  
Sungho Heo ◽  
Dongkyu Lee ◽  
H. T. Cho ◽  
W. A. Krull ◽  
Hyunsang Hwang
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Suppression of implantation-induced damage in 6H–SiC by simultaneous excimer laser irradiation during ion implantation

2000 ◽  
Vol 76 (26) ◽  
pp. 3867-3869 ◽  
Author(s):  
Yuji Hishida ◽  
Masanori Watanabe ◽  
Kohei Sekine ◽  
Kenichi Sugino ◽  
Jun Kudo
Keyword(s):  
Ion Implantation ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation
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