Suppression of implantation-induced damage in 6H–SiC by simultaneous excimer laser irradiation during ion implantation

2000 ◽  
Vol 76 (26) ◽  
pp. 3867-3869 ◽  
Author(s):  
Yuji Hishida ◽  
Masanori Watanabe ◽  
Kohei Sekine ◽  
Kenichi Sugino ◽  
Jun Kudo
Keyword(s):  
Ion Implantation ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation

FORMATION OF OXYGEN-FREE GADOLINIUM SILICIDE LAYER BY ION IMPLANTATION AND PULSED EXCIMER LASER IRRADIATION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4331-4334 ◽  
Author(s):  
DEYAN HE ◽  
WENWU WANG ◽  
HAIJUN JIA ◽  
ERQING XIE
Keyword(s):  
Surface Layer ◽  
Ion Implantation ◽  
Laser Irradiation ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Continuous Layer ◽  
Silicide Layer ◽  
Excimer Laser Irradiation ◽  
Buried Layer

Buried gadolinium silicide layer was prepared by ion implantation of Gd into n-type Si (100) wafer. It was shown that GdSi 2 grains have been formed during Gd + implantation. An oxygen-free continuous layer of (112) oriented GdSi 2 was obtained after irradiating the sample using a pulsed excimer laser. Comparing with conventional thermal annealing pulsed excimer laser irradiation at energy densities close to the threshold for melting Si surface layer could prepare oxygen-free GdSi 2 buried layer within a preferred region.

Surface modification of inorganic solid oxides by excimer laser irradiation

1989 ◽  
Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Solid Oxides ◽  
Excimer Laser Irradiation

Wavelength Dependence of Excimer Laser Irradiation Effects on Ethylene-Tetrafluoroethylene Copolymer

1994 ◽  
Vol 33 (Part 1, No. 8) ◽  
pp. 4764-4768 ◽  
Author(s):  
Yuji Hamada ◽  
Shunichi Kawanishi ◽  
Masanobu Nishii ◽  
Shun'ichi Sugimoto ◽  
Tadashi Yamamoto
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Wavelength Dependence ◽  
Irradiation Effects ◽  
Excimer Laser Irradiation ◽  
Ethylene Tetrafluoroethylene

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

Polycrystalline silicon recrystallized with excimer laser irradiation and impurity doping using ion doping method

1993 ◽  
Vol 73 (7) ◽  
pp. 3271-3275 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Ion Doping ◽  
Impurity Doping ◽  
Excimer Laser Irradiation

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation
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