UV Photoannealing and RTP of Thin Sol-Gel Films

1996 ◽  
Vol 429 ◽  
Author(s):  
R. E.Van de Leest ◽  
F. Roozeboom
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
High Quality ◽  
Iron Nickel ◽  
Excimer Laser Irradiation ◽  
Alkoxide Precursor ◽  
Sol Gel Films

AbstractVarious annealing methods for sol-gel films have been investigated. Thermal, photothermal, RTP and excimer laser annealing have been used to convert sol-gel precursor films into oxidic films. RTP annealing of sol-gel films yields better results than classical thermal annealing or excimer laser irradiation. Photochemical effects during RTP annealing contribute to obtain high-quality oxide films. The various annealing methods are illustrated by the annealing of alkoxide precursor films of tantalum, iron, nickel and yttrium.

Densification and crystallization of SnO2:Sb sol–gel films using excimer laser annealing

2003 ◽  
Vol 208-209 ◽  
pp. 382-387 ◽  
Author(s):  
C.S. Sandu ◽  
V.S. Teodorescu ◽  
C. Ghica ◽  
B. Canut ◽  
M.G. Blanchin ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
Sol Gel Films

Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

2019 ◽  
Vol 19 (2) ◽  
pp. 168-173 ◽  
Author(s):  
Hyuk Jin Kim ◽  
Min-Jae Maeng ◽  
J.H. Park ◽  
Min Gyu Kang ◽  
Chong Yun Kang ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Low Temperature ◽  
Excimer Laser ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
Sol Gel Films

High-Performance Poly-Si TFTs with Multiple Selectively Doped Regions in the Active Layer

2000 ◽  
Vol 621 ◽  
Author(s):  
Min-Cheol Lee ◽  
Juhn-Suk Yoo ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Channel Length ◽  
Depletion Region ◽  
Excimer Laser Annealing ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

ABSTRACTWe have proposed and fabricated a new poly-Si TFT that employs selectively doped regions between the source and drain in order to reduce leakage current without the sacrifice of the on current. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of source/drain, reduce the effective channel length during the on state. Under the off state, the selectively doped regions may reduce the lateral electric field induced in the depletion region near drain so that the leakage current reduces considerably. The experimental data of the proposed TFT shows that it has the high on-current, low leakage current and low threshold voltage when compared with conventional TFT. The fabrication steps for the proposed TFT are reduced because ion-implantation for source/drain and selectively doped regions is performed simultaneously prior to an excimer laser irradiation. It should be noted that, in the proposed TFT, only one excimer laser annealing is required while two excimer laser annealing steps are required in conventional TFT.

Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation

1996 ◽  
Author(s):  
Cheol-Min Park ◽  
Juhn-Suk Yoo ◽  
Byung-Hyuk Min ◽  
Dae-Kyu Moon ◽  
Min-Koo Han
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
High Quality ◽  
Excimer Laser Irradiation

A Novel Method for the Preparation of Green Photoluminescent Undoped Zinc Oxide Film Involving Excimer Laser Irradiation of a Sol-Gel-Derived Precursor

2000 ◽  
Vol 39 (Part 2, No. 7B) ◽  
pp. L713-L715 ◽  
Author(s):  
Toshimi Nagase ◽  
Toshihiko Ooie ◽  
Yoji Makita ◽  
Masahiro Nakatsuka ◽  
Kazuo Shinozaki ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Film ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Sol Gel ◽  
Zinc Oxide Film ◽  
Excimer Laser Irradiation ◽  
Novel Method

Morphology, Structure and Photoluminescence Properties of Zinc Oxide Films Prepared by Excimer Laser Irradiation of Sol–Gel-Derived Precursors

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6296-6303 ◽  
Author(s):  
Toshimi Nagase ◽  
Toshihiko Ooie ◽  
Yoji Makita ◽  
Shuji Kasaishi ◽  
Masahiro Nakatsuka ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Sol Gel ◽  
Oxide Films ◽  
Photoluminescence Properties ◽  
Zinc Oxide Films ◽  
Excimer Laser Irradiation

High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing

2011 ◽  
Vol 382 ◽  
pp. 26-29
Author(s):  
King Kung Wu ◽  
Wen Chung Chang
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Power ◽  
Laser Annealing ◽  
Process Window ◽  
Excimer Laser Annealing ◽  
High Quality ◽  
Surface Ablation ◽  
Processing Ability

Amorphous silicon (a:Si) recrystalized to poly-silicon (poly:Si) in different gas environments by excimer laser annealing (ELA) is studied. Variations of threshold laser power for the generation of surface ablation in pure N2 gas and the mixture of N2:98% and O2:2% environments are also investigated, respectively. From experiments, it is found the combination of N2:98% and O2:2% gas can enhance the threshold laser power from 320mJ/cm2 to 390mJ/cm2 for the suppressing of surface ablation phenomenon. In the condition of average grain over 0.25um, the process window (i.e. laser power for processing ability) is 30mJ/cm2 for pure N2 only, but is 50mJ/cm2 for the combination of N2:98% and O2:2%.

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