scholarly journals CN Molecular Negative-Ion Extraction Properties from RF Plasma-Sputter-Type Heavy Negative-Ion Source and CN Negative-Ion Beam Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 284-287
Author(s):  
Hiroshi TSUJI ◽  
Tetsuo TOMITA ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Rf Plasma ◽  
Ion Extraction ◽  
Ion Beam Deposition ◽  
Extraction Properties ◽  
Beam Deposition

Formation of Thin Au Films Using Negative-Ion-Beam Deposition

1997 ◽  
Vol 160 (2) ◽  
pp. 591-597
Author(s):  
C. Heck ◽  
A. Chayahara ◽  
N. Tsubouchi ◽  
Y. Horino ◽  
K. Fujii ◽  
...  
Keyword(s):  
Ion Beam ◽  
Negative Ion ◽  
Ion Beam Deposition ◽  
Beam Deposition

Low‐energy (5

1995 ◽  
Vol 13 (6) ◽  
pp. 2836-2842 ◽  
Author(s):  
Y.‐W. Kim ◽  
I. Petrov ◽  
H. Ito ◽  
J. E. Greene
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Low Energy ◽  
High Brightness ◽  
Ion Beam Deposition ◽  
Beam Deposition

Composite Nanowires from Ion Beam Modification of Si Nanowires

1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  
Keyword(s):  
Reaction Pathway ◽  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Hydrogen Ions ◽  
Si Nanowires ◽  
Interacting Particles ◽  
Ion Beam Modification ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

scholarly journals Ion-Beam Deposition/Etching Using EMIM-N(CN)2 Ionic Liquid Ion Source

2015 ◽  
Vol 40 (2) ◽  
pp. 87-90 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Yuki Hoshide ◽  
Takuya Hamaguchi ◽  
Hiromichi Ryuto ◽  
Gikan H. Takaoka
Keyword(s):  
Ionic Liquid ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Deposition ◽  
Beam Deposition

Carbon Nitride Formation by Plasma Assisted Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
G.S. Tompa ◽  
I.H. Murzin ◽  
S.I. Kim ◽  
Y.O Ahn ◽  
B. Gallois ◽  
...  
Keyword(s):  
Beam Energy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Plasma Source ◽  
Diagnostic Techniques ◽  
Rf Plasma ◽  
Ion Beam Deposition ◽  
Optical And Mechanical Properties ◽  
Beam Deposition

AbstractTheoretical works have indicated that carbon nitride, in a β-C4N4 phase, would have optical and mechanical properties comparable to or exceeding those of diamond. In this effort, the formation of carbon nitride thin films was investigated using a Plasma Assisted Ion Beam Deposition (PAIBD). In this technique, a C- ion beam combined with a N2 or NH3 RF plasma source is used to synthesize carbon nitride films. These films were investigated as a function of both C- ion beam energy and the power of the plasma source. The C- ion energy was found to be a key parameter in the formation of carbon nitride. The films were evaluated by a variety of diagnostic techniques including Raman, AES, XRD and FTIR. Analysis confirms high nitrogen concentration in the synthesized films and the major portion of carbon being single bonds in the sp3 bond configuration, which is a characteristic of the tetrahedral -C3N4 phase. Tribology tests confirmed that the friction coefficient and the wear rate are comparable to diamond. The results show that the higher C- ion beam energy (-150 eV) forms insulating films with the highest single bond percentages in the range studied. We believe beam energy control is critical to the types of bonds formed.

Sign in / Sign up

Export Citation Format

Share Document