Carbon Nitride Formation by Plasma Assisted Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
G.S. Tompa ◽  
I.H. Murzin ◽  
S.I. Kim ◽  
Y.O Ahn ◽  
B. Gallois ◽  
...  
Keyword(s):  
Beam Energy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Nitrogen Concentration ◽  
Plasma Source ◽  
Diagnostic Techniques ◽  
Rf Plasma ◽  
Ion Beam Deposition ◽  
Optical And Mechanical Properties ◽  
Beam Deposition

AbstractTheoretical works have indicated that carbon nitride, in a β-C4N4 phase, would have optical and mechanical properties comparable to or exceeding those of diamond. In this effort, the formation of carbon nitride thin films was investigated using a Plasma Assisted Ion Beam Deposition (PAIBD). In this technique, a C- ion beam combined with a N2 or NH3 RF plasma source is used to synthesize carbon nitride films. These films were investigated as a function of both C- ion beam energy and the power of the plasma source. The C- ion energy was found to be a key parameter in the formation of carbon nitride. The films were evaluated by a variety of diagnostic techniques including Raman, AES, XRD and FTIR. Analysis confirms high nitrogen concentration in the synthesized films and the major portion of carbon being single bonds in the sp3 bond configuration, which is a characteristic of the tetrahedral -C3N4 phase. Tribology tests confirmed that the friction coefficient and the wear rate are comparable to diamond. The results show that the higher C- ion beam energy (-150 eV) forms insulating films with the highest single bond percentages in the range studied. We believe beam energy control is critical to the types of bonds formed.

Structure of carbon nitride films prepared by mass-separated low-energy ion beam deposition

2003 ◽  
Vol 12 (3-7) ◽  
pp. 1061-1065 ◽  
Author(s):  
Kazuhiro Yamamoto ◽  
Toshiya Watanabe ◽  
Koichiro Wazumi ◽  
Yoshinori Koga
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ion beam deposition of diamond-like carbon from an r.f. inductively coupled CH4-plasma source

1996 ◽  
Vol 86-87 ◽  
pp. 708-714 ◽  
Author(s):  
B. Druz ◽  
S. DiStefano ◽  
A. Hayes ◽  
E. Ostan ◽  
K. Williams ◽  
...  
Keyword(s):  
Ion Beam ◽  
Plasma Source ◽  
Diamond Like Carbon ◽  
Inductively Coupled ◽  
Ion Beam Deposition ◽  
Beam Deposition

Microstructure and Adhesion Properties of a-CN and Ti/a-CN Nanocomposite Thin Films Prepared by Hybrid Ion Beam Deposition Technique

2014 ◽  
Vol 938 ◽  
pp. 36-39
Author(s):  
P. Vijai Bharathy ◽  
Q. Yang ◽  
D. Nataraj
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Deposition Technique ◽  
Nanomechanical Properties ◽  
Ion Beam Deposition ◽  
Amorphous Carbon Nitride ◽  
Beam Deposition

Carbon based materials have attracted much for its unique surface microstructure and nanomechanical properties among researchers. In this study, the influence of microstructure on the nanomechanical properties of thin carbon based films was studied in detail. For which amorphous Carbon nitride (a-CN) and Titanium incorporated amorphous Carbon nitride (Ti/a-CN) thin films were prepared with a thickness of less than 100 nm using hybrid ion beam deposition technique. The incorporation of Ti into the a-CN matrix greatly modified the sp3/sp2 hybridized bonding ratio and it is reflected in the mechanical hardness of Ti/a-CN thin film. Most of the incorporated Ti reacts with carbon and nitrogen to form TiN and TiCN phases respectively. On the other hand, owing to the usage of energetic ion bombardment and the presence of TiN/TiCN phases in the carbon nitride matrix, the Ti/a-CN nanocomposite film shows improved adhesion strength compared to that of pure a-CN film. Overall the presence of hard metallic phase in the amorphous carbon network alters the microstructure and improves the adhesion strength of a-CN films suitable for protective coating applications.

Computer simulation of the ion beam deposition of binary thin films: Carbon nitride and boron carbide

1994 ◽  
Vol 12 (6) ◽  
pp. 3192-3199 ◽  
Author(s):  
S. S. Todorov ◽  
D. Marton ◽  
K. J. Boyd ◽  
A. H. Al‐Bayati ◽  
J. W. Rabalais
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Boron Carbide ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Direct ion beam deposition of hard (>30 GPa) diamond-like films from RF inductively coupled plasma source

2001 ◽  
Vol 10 (3-7) ◽  
pp. 931-936 ◽  
Author(s):  
B. Druz ◽  
I. Zaritskiy ◽  
J. Hoehn ◽  
V.I. Polyakov ◽  
A.I. Rukovishnikov ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Ion Beam Deposition ◽  
Beam Deposition

Quantitative Analysis of Chemically-Enhanced Sputtering during Ion Beam Deposition of Carbon Nitride Thin Films

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
H. Feldermann ◽  
M. Sebastian
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Film ◽  
Protective Layer ◽  
Ion Energy ◽  
Protective Layers ◽  
Ion Beam Deposition ◽  
Preferential Loss ◽  
Beam Deposition

AbstractThe sputter losses during growth of carbon nitride thin films using mass selected ion beam deposition of C+ and N+ ions with energies between 20 eV and 500 eV are studied. Depending on the ion energy 35 – 100 % of C+ but only 3 – 35 % of N+ ions are incorporated in the films. Thus the films are always strongly nitrogen-deficient. To suppress the preferential loss of nitrogen we introduce the concept of continuously growing surface protective layers. Starting from a diamond-like carbon film as substrate, carbon nitride films are deposited using 100 eV 12C+ and 1 keV 14N+ ions, so that the growing films are always covered with a 1–2 rm thick protective layer of amorphous carbon. In this case we observe an increased nitrogen incorporation yielding to films with average film composition of C2N.

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