scholarly journals Design and Analysis of Go-Kart Chassis for Front, Side and Rear Impact

2019 ◽  
Vol Volume-3 (Issue-3) ◽  
pp. 718-723
Author(s):  
Chetan Mahatme ◽  
Pratik Lande ◽  
Surendra Nagpure | Abhishek Pawar | Nikhil Kharabe ◽  
Keyword(s):  
Front Side ◽  
Rear Impact

A Novel Approach to Front-Side Deprocessing for Thinned Die after Backside Failure Isolation

2003 ◽  
Author(s):  
Dat Nguyen ◽  
Cuong Phan ◽  
Jeff Conner ◽  
Martin Smith ◽  
John Drummond
Keyword(s):  
Front Side ◽  
Ball Grid Arrays ◽  
Safe Handling ◽  
Flip Chips ◽  
Novel Approach ◽  
Diamond Saw ◽  
Reconstructed Sample

Abstract This paper describes a novel approach for safe handling of the thinned die from the front; a technique that can also be successfully applied to preserve cracked die. The discussion provides details on the characteristics and processes involved in backside reconstruction, thinned die reconstruction, and front-side deprocessing of thinned die. The finished backside reconstruction sample was cross-sectioned for examination using a diamond saw. After 6 hours of bake, no cracking of the thinned die was observed. Front-side deprocessing was then applied to the backside reconstructed sample. The sample remains intact. The technique has proven to be easily applied and highly reliable, and provides a solution for front-side deprocessing for both high pin count ball grid arrays and flip chips.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

Backside Mechanical Preparation Methodology for Effective Failure Analysis on Small and Non-Exposed Die Paddle Package

2018 ◽  
Author(s):  
Ong Pei Hoon ◽  
Ng Kiong Kay ◽  
Gwee Hoon Yen
Keyword(s):  
Failure Analysis ◽  
Chemical Etching ◽  
Chemical Resistance ◽  
Etching Time ◽  
Lead Frame ◽  
Front Side ◽  
Electrical Measurements ◽  
Mechanical Preparation ◽  
Die Surface ◽  
Copper Lead

Abstract Chemical etching is commonly used in exposing the die surface from die front-side and die backside because of its quick etching time, burr-free and stress-free. However, this technique is risky when performing copper lead frame etching during backside preparation on small and non-exposed die paddle package. The drawback of this technique is that the copper leads will be over etched by 65% Acid Nitric Fuming even though the device’s leads are protected by chemical resistance tape. Consequently, the device is not able to proceed to any other further electrical measurements. Therefore, we introduced mechanical preparation as an alternative solution to replace the existing procedure. With the new method, we are able to ensure the copper leads are intact for the electrical measurements to improve the effectiveness and accuracy of physical failure analysis.

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

1997 ◽  
Author(s):  
S.-S. Lee ◽  
J.-S. Seo ◽  
N.-S. Cho ◽  
S. Daniel
Keyword(s):  
Thermal Emission ◽  
Test Cases ◽  
Memory Devices ◽  
Front Side ◽  
Emission Analysis ◽  
Intensity Attenuation ◽  
Analysis Techniques ◽  
Defect Sites ◽  
Emission Microscopy ◽  
Microscopy Techniques

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.

scholarly journals Is Acceleration a Valid Proxy for Injury Risk in Minimal Damage Traffic Crashes? A Comparative Review of Volunteer, ADL and Real-World Studies

2021 ◽  
Vol 18 (6) ◽  
pp. 2901
Author(s):  
Paul S. Nolet ◽  
Larry Nordhoff ◽  
Vicki L. Kristman ◽  
Arthur C. Croft ◽  
Maurice P. Zeegers ◽  
...  
Keyword(s):  
Real World ◽  
Injury Risk ◽  
Angular Acceleration ◽  
Traffic Crashes ◽  
Rear Impact ◽  
Comparative Review ◽  
Minimal Damage ◽  
Injury Causation ◽  
Crash Tests ◽  
Biomechanical Approach

Injury claims associated with minimal damage rear impact traffic crashes are often defended using a “biomechanical approach,” in which the occupant forces of the crash are compared to the forces of activities of daily living (ADLs), resulting in the conclusion that the risk of injury from the crash is the same as for ADLs. The purpose of the present investigation is to evaluate the scientific validity of the central operating premise of the biomechanical approach to injury causation; that occupant acceleration is a scientifically valid proxy for injury risk. Data were abstracted, pooled, and compared from three categories of published literature: (1) volunteer rear impact crash testing studies, (2) ADL studies, and (3) observational studies of real-world rear impacts. We compared the occupant accelerations of minimal or no damage (i.e., 3 to 11 kph speed change or “delta V”) rear impact crash tests to the accelerations described in 6 of the most commonly reported ADLs in the reviewed studies. As a final step, the injury risk observed in real world crashes was compared to the results of the pooled crash test and ADL analyses, controlling for delta V. The results of the analyses indicated that average peak linear and angular acceleration forces observed at the head during rear impact crash tests were typically at least several times greater than average forces observed during ADLs. In contrast, the injury risk of real-world minimal damage rear impact crashes was estimated to be at least 2000 times greater than for any ADL. The results of our analysis indicate that the principle underlying the biomechanical injury causation approach, that occupant acceleration is a proxy for injury risk, is scientifically invalid. The biomechanical approach to injury causation in minimal damage crashes invariably results in the vast underestimation of the actual risk of such crashes, and should be discontinued as it is a scientifically invalid practice.

scholarly journals A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2506
Author(s):  
Nguyen Hoai Ngo ◽  
Kazuhiro Shimonomura ◽  
Taeko Ando ◽  
Takayoshi Shimura ◽  
Heiji Watanabe ◽  
...  
Keyword(s):  
Image Sensor ◽  
Frame Rate ◽  
Front Side ◽  
Digital Signals ◽  
Memory Element ◽  
Image Capture ◽  
Readout Circuits ◽  
Pros And Cons ◽  
Very High

A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizontal motion of signal carriers. On the front side, the pixel has a guide gate at the center, branching to six first-branching gates, each bifurcating to second-branching gates, and finally connected to 12 (=6×2) floating diffusions. The signals are either read out after an image capture operation to replay 12 to 48 consecutive images, or continuously transferred to a memory chip stacked on the front side of the sensor chip and converted to digital signals. A CCD burst image sensor enables a noiseless signal transfer from a photodiode to the in-situ storage even at very high frame rates. However, the pixel count conflicts with the frame count due to the large pixel size for the relatively large in-pixel CCD memory elements. A CMOS burst image sensor can use small trench-type capacitors for memory elements, instead of CCD channels. However, the transfer noise from a floating diffusion to the memory element increases in proportion to the square root of the frame rate. The Hanabi chip overcomes the compromise between these pros and cons.

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