scholarly journals An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar Transistors

2017 ◽  
Vol 5 (1) ◽  
pp. 68
Author(s):  
E.F Chor ◽  
C.P Chen ◽  
L.S Tan
Keyword(s):  
Deposition Temperature ◽  
Bipolar Transistors ◽  
Polysilicon Emitter

An Investigation of the Effects of Emitter Pre-Deposition Temperature in Double-Diffued Polysilicon Emitter Bipolar Transistors

Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

1989 ◽  
Vol 146 ◽  
Author(s):  
Fred Ruddell ◽  
Colin Parkes ◽  
B Mervyn Armstrong ◽  
Harold S Gamble
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Bipolar Transistors ◽  
Native Oxide ◽  
Plasma Oxidation ◽  
Oxide Removal ◽  
Polysilicon Emitter ◽  
Reaction Processing

ABSTRACTThis paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation and silicon deposition. Polysilicon layers produced by the system are incorporated into N-P-N polysilicon emitter bipolar transistors. These devices fabricated using a sequential in-situ plasma clean-polysilicon deposition schedule exhibited uniform gains limited to that of long single crystal emitters. Devices with either plasma grown or native oxide layers below the polysilicon exhibited much higher gains. The suitability of the system for sequential and limited reaction processing has been established.

Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

1999 ◽  
Vol 43 (5) ◽  
pp. 931-936 ◽  
Author(s):  
Jean-Marc Routoure ◽  
Jacques Lepaisant ◽  
Daniel Bloyet ◽  
Serge Bardy ◽  
Jacques Lebailly
Keyword(s):  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Crowding Effects ◽  
Polysilicon Emitter
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