1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest]
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Published By IEEE

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Modeling of High Energy Transport in Silicon by Means of the Monte Carlo Method

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664534 ◽

2005 ◽

Author(s):

E. Sangiorgi ◽

C. Fiegna ◽

A. Abramo

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Energy Transport ◽

High Energy ◽

The Monte Carlo Method

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Device Modeling Beyond Drift Diffusion Approximation

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664529 ◽

2005 ◽

Author(s):

W.L. Engl ◽

B. Monerzhagen

Keyword(s):

Diffusion Approximation ◽

Device Modeling ◽

Drift Diffusion

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Design and Simulation of Analog Circuits for Adaptive Resonance Theory (art) Neural Networks

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664552 ◽

2005 ◽

Author(s):

C.-S. Ho ◽

J.J. Liou ◽

M. Georgiopoulos

Keyword(s):

Neural Networks ◽

Analog Circuits ◽

Adaptive Resonance Theory ◽

Resonance Theory ◽

Adaptive Resonance

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Modeling and Simulation of the Standard Cmos Compatible Lateral and Substrate Bjts for Analog Application

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664549 ◽

2005 ◽

Author(s):

En-Jer Jack Jang

Keyword(s):

Modeling And Simulation ◽

Cmos Compatible

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An Analytical Threshold Voltage Model for Sige-Channel Pmos Devices

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664548 ◽

2005 ◽

Author(s):

J.B. Kuo ◽

M.C. Tang ◽

J.H. Sim

Keyword(s):

Threshold Voltage ◽

Threshold Voltage Model

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Oxidation Modeling of Thin SiO/sub 2/ Using N/sub 2/O for Deep Submicron Cmos Technology

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664547 ◽

2005 ◽

Author(s):

S.C. Sun ◽

H.Y. Chang ◽

T.S. Chao

Keyword(s):

Cmos Technology ◽

Deep Submicron ◽

Submicron Cmos ◽

Oxidation Modeling

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The Status of Semiconductor Device Modeling in the Classical Domain

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664531 ◽

2005 ◽

Author(s):

A.H. Marshak

Keyword(s):

Semiconductor Device ◽

Device Modeling ◽

Semiconductor Device Modeling ◽

Classical Domain ◽

The Status

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The Modeling and Characterization of Poly-Emitter n-p-n Bipolar Transistor in Bicmos Device

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664538 ◽

2005 ◽

Author(s):

G.M. Hong ◽

J.Y. Lin ◽

K.Z. Chang ◽

S.G. Lu ◽

H.L. Hwang

Keyword(s):

Bipolar Transistor

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The Shorted Anode Base Resistance Controlled Thyristor

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664551 ◽

2005 ◽

Author(s):

D. Flores ◽

P. Godignon ◽

J. Fernandez ◽

S. Hidalgo ◽

J. Rebollo ◽

...

Keyword(s):

Base Resistance

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An Analytical Forward Transit Time/current Gain Model for SiGe-Base Hbts

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664565 ◽

2005 ◽

Author(s):

T.C. Lu ◽

H.P. Chen ◽

J.B. Kuo

Keyword(s):

Transit Time ◽

Current Gain

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1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest]Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Modeling of High Energy Transport in Silicon by Means of the Monte Carlo Method

Device Modeling Beyond Drift Diffusion Approximation

Design and Simulation of Analog Circuits for Adaptive Resonance Theory (art) Neural Networks

Modeling and Simulation of the Standard Cmos Compatible Lateral and Substrate Bjts for Analog Application

An Analytical Threshold Voltage Model for Sige-Channel Pmos Devices

Oxidation Modeling of Thin SiO/sub 2/ Using N/sub 2/O for Deep Submicron Cmos Technology

The Status of Semiconductor Device Modeling in the Classical Domain

The Modeling and Characterization of Poly-Emitter n-p-n Bipolar Transistor in Bicmos Device

The Shorted Anode Base Resistance Controlled Thyristor

An Analytical Forward Transit Time/current Gain Model for SiGe-Base Hbts

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest]
Latest Publications