scholarly journals Improving the Carrier Mobility of Pentacene Thin Film Transistors by Surface Flattened Polysilsesquioxane Gate Dielectric Layers

2017 ◽  
Vol 66 (9) ◽  
pp. 644-647 ◽  
Author(s):  
Daisuke MICHIURA ◽  
Yoshio NAKAHARA ◽  
Kazuyuki UNO ◽  
Ichiro TANAKA
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Dielectric Layers

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3327-3331 ◽  
Author(s):  
Hideto Shibao ◽  
Yoshio Nakahara ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Uv Light ◽  
Limiting Factor ◽  
Dielectric Layers ◽  
Linker Molecules ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

scholarly journals Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

2010 ◽  
Vol 13 (9) ◽  
pp. H313 ◽  
Author(s):  
A. L. Salas-Villasenor ◽  
I. Mejia ◽  
J. Hovarth ◽  
H. N. Alshareef ◽  
D. K. Cha ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Chalcogenide Thin Film

A novel polymer as a functional dielectric layer for OTFTs to improve the grain size of the pentacene semiconductor

2016 ◽  
Vol 7 (11) ◽  
pp. 2143-2150 ◽  
Author(s):  
Yao Li ◽  
He Wang ◽  
Xuesong Wang ◽  
Zuosen Shi ◽  
Donghang Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Charge Carrier ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Single Variable ◽  
Dielectric Layers ◽  
The Relationship

A series of novel polymers as functional dielectric layers for pentacene thin-film transistors was synthesized and investigated to explore the relationship between the grain size and the charge carrier mobility with a single variable.

scholarly journals Growth, characterization, and thin film transistor application of CH3NH3PbI3 perovskite on polymeric gate dielectric layers

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49353-49360 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
Johnny K. W. Ho ◽  
Rocky K. H. Chan ◽  
S. H. Cheung ◽  
Louis M. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Polymeric Surfaces ◽  
Dielectric Layers ◽  
Growth Characterization ◽  
Micron Size

Micron-size organolead perovskite crystals grown on insulating polymeric surfaces as gate dielectric materials for high performance thin film transistors.

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54729-54739 ◽  
Author(s):  
Han Wang ◽  
Tieyu Sun ◽  
Wangying Xu ◽  
Fangyan Xie ◽  
Lei Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Nitrate Solution ◽  
Aluminum Nitrate ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Dielectric Layers

An improved hydrophilic aluminum nitrate solution was designed to spin coat robust dielectric layers for thin film transistors.

Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

2019 ◽  
Vol 1 (6) ◽  
pp. 1003-1011 ◽  
Author(s):  
Gouri Syamala Rao Mullapudi ◽  
Gonzalo Alonso Velazquez-Nevarez ◽  
Carlos Avila-Avendano ◽  
Jorge Alejandro Torres-Ochoa ◽  
Manuel Angel Quevedo-López ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Zno Thin Film ◽  
Dielectric Layers ◽  
Low Temperature Deposition ◽  
Temperature Deposition
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