Pentacene-Thin Film Transistors with ZrO[sub 2] Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition

2007 ◽  
Vol 10 (3) ◽  
pp. H90 ◽  
Author(s):  
Sun Jin Yun ◽  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Seong Hyun Kim
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Dielectric Layers ◽  
Layer Deposition

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

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