scholarly journals Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

2010 ◽  
Vol 13 (9) ◽  
pp. H313 ◽  
Author(s):  
A. L. Salas-Villasenor ◽  
I. Mejia ◽  
J. Hovarth ◽  
H. N. Alshareef ◽  
D. K. Cha ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Chalcogenide Thin Film

scholarly journals Sol–Gel PMMA–ZrO2 Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

ACS Omega ◽  
2017 ◽  
Vol 2 (10) ◽  
pp. 6968-6974 ◽  
Author(s):  
Clemente G. Alvarado-Beltrán ◽  
Jorge L. Almaral-Sánchez ◽  
Israel Mejia ◽  
Manuel A. Quevedo-López ◽  
Rafael Ramirez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel ◽  
Hybrid Layers

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

2016 ◽  
Vol 108 (3) ◽  
pp. 033502 ◽  
Author(s):  
Yu-Hong Chang ◽  
Ming-Jiue Yu ◽  
Ruei-Ping Lin ◽  
Chih-Pin Hsu ◽  
Tuo-Hung Hou
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Positive Bias ◽  
Bias Stress ◽  
Al2o3 Gate Dielectric

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

2005 ◽  
Vol 93 (8) ◽  
pp. 1420-1428 ◽  
Author(s):  
A. Sazonov ◽  
D. Striakhilev ◽  
Czang-Ho Lee ◽  
A. Nathan
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Flexible Electronics ◽  
Thin Film Transistors

Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors

2019 ◽  
Vol 35 (4) ◽  
pp. 73-79
Author(s):  
Mohammad Esmaeili-Rad ◽  
Gholamreza Chaji ◽  
Flora Li ◽  
Maryam Moradi ◽  
Andrei Sazonov ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Film ◽  
The Stability

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3327-3331 ◽  
Author(s):  
Hideto Shibao ◽  
Yoshio Nakahara ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Uv Light ◽  
Limiting Factor ◽  
Dielectric Layers ◽  
Linker Molecules ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54729-54739 ◽  
Author(s):  
Han Wang ◽  
Tieyu Sun ◽  
Wangying Xu ◽  
Fangyan Xie ◽  
Lei Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Nitrate Solution ◽  
Aluminum Nitrate ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Dielectric Layers

An improved hydrophilic aluminum nitrate solution was designed to spin coat robust dielectric layers for thin film transistors.

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