scholarly journals Growth, characterization, and thin film transistor application of CH3NH3PbI3 perovskite on polymeric gate dielectric layers

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49353-49360 ◽  
Author(s):  
Jenner H. L. Ngai ◽  
Johnny K. W. Ho ◽  
Rocky K. H. Chan ◽  
S. H. Cheung ◽  
Louis M. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dielectric Materials ◽  
Polymeric Surfaces ◽  
Dielectric Layers ◽  
Growth Characterization ◽  
Micron Size

Micron-size organolead perovskite crystals grown on insulating polymeric surfaces as gate dielectric materials for high performance thin film transistors.

ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS

2011 ◽  
Vol 20 (01) ◽  
pp. 171-182 ◽  
Author(s):  
BURHAN BAYRAKTAROGLU ◽  
KEVIN LEEDY ◽  
ROBERT NEIDHARD
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Speed ◽  
High Performance ◽  
Gate Dielectric ◽  
Film Growth ◽  
Drain Current ◽  
Dielectric Materials ◽  
High Resistivity ◽  
Zno Films

In this study, nc - ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc - ZnO films deposited at a temperature range of 25°C to 400°C were made of closely packed nanocolums showing strong orientation. The influences of film growth temperature and post growth annealing on device performance were investigated. Various gate dielectric materials, including SiO 2, Al 2 O 3, and HfO 2 were shown to be suitable for high performance device applications. Bottom-gate FETs fabricated on high resistivity (>2000 ohm-cm) Si substrates demonstrated record DC and high speed performance of any thin film transistors. Drain current on/off ratios better than 1012 and sub-threshold voltage swing values of less than 100mV/decade could be obtained. Devices with 2μm gate lengths produced exceptionally high current densities of >750mA/mm. Shorter gate length devices (LG=1.2μm) had current and power gain cut-off frequencies, f T and f max , of 2.9GHz and 10GHz, respectively.

High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

2012 ◽  
Vol 520 (21) ◽  
pp. 6681-6683 ◽  
Author(s):  
Rongsheng Chen ◽  
Wei Zhou ◽  
Meng Zhang ◽  
Hoi Sing Kwok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Zno Thin Film ◽  
Al2o3 Gate Dielectric

Organic Thin Film Transiators on Synthesis Paper

2006 ◽  
Vol 965 ◽  
Author(s):  
Hua-Chi Cheng ◽  
Yu-Rung Peng ◽  
Chao-An Chung ◽  
Wei-Hsin Hou ◽  
Zing-Way Pei
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Paper Substrate ◽  
Organic Transistor ◽  
The Cost ◽  
Slit Die

ABSTRACTWe have demonstrated organic thin-film transistor devices on synthesis paper of polypropylene (PP). All the fabrications are in solution-based processes except electrodes. As a barrier and smoother layer, photosensitive epoxy, 5μm-thich was coated on the paper substrate by using slit die coating. Polyvinyl phenol (PVP) was mixed with poly (melamine-co-formaldehyde) methylated, filmed by spin coating and ultraviolet (UV) cross linked to provide the gate dielectric layer. Using poly (3-hexylthiophene) as an active layer, a high-performance organic transistor with field effect mobility up to 0.006 cm2/ V s and an on/off ratio of 50 can be achieved. For the applications in flexible and disposable electronics, to built organic transistors on a cheap synthesis paper substrate can extremely lower the cost.

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