scholarly journals High energy-efficient electrical drive with multilevel inverter and widebandgap power semiconductors

2021 ◽  
Vol 19 ◽  
pp. 91-96
Author(s):  
R. Mecke ◽  
Keyword(s):  
High Energy ◽  
Wide Bandgap ◽  
Drive System ◽  
Junction Temperature ◽  
Switching Frequency ◽  
Loss Reduction ◽  
Voltage Range ◽  
Power Semiconductors ◽  
Power Switches ◽  
Motor Operation

Multilevel inverters are an alternative for electrical drives with DC link voltage between 560 and 750 V. In this voltage range new wide-bandgap power switches (SiC MOSFET, GaN FET) are available. The paper analyses three-, four-, five- and seven-level inverters. A simulation model of the drive system, including the 11 kW induction motor and motor filter is developed. By replacing IGBTs with SiC FETs, the twolevel inverter achieved a loss reduction of 59 % at 25 °C and 150 °C at nominal motor operation point. By using the five-level inverter with GaN FETs, a further loss reduction of 9 % only at low junction temperature is possible. With a higher number of inverter levels, the size of the motor filter can be reduced. With five inverter levels and 40 kHz switching frequency volume and weight can be reduced by 86 % and 78 % respectively. The overall efficiency of the drive system achieves 98.5 % at 25 °C and 98.1 % at 150 °C. Compared to the state of the art (two-level with IGBTs with 5 kHz), this is an improvement of 2.1 % at 25 °C and 2.7 % at 150 °C.

scholarly journals A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4981
Author(s):  
Ekaterina Abramushkina ◽  
Assel Zhaksylyk ◽  
Thomas Geury ◽  
Mohamed El Baghdadi ◽  
Omar Hegazy
Keyword(s):  
Voltage Drop ◽  
Low Cost ◽  
Thermal Flux ◽  
Wide Bandgap ◽  
Junction Temperature ◽  
Switching Frequency ◽  
Switching Losses ◽  
Blocking Voltage ◽  
Voltage Limit ◽  
Main Components

The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a battery pack, the automotive inverter manages the power of the motor. EVs require a highly efficient inverter, which satisfies low cost, size, and weight requirements. One approach to meeting these requirements is to use the new wide-bandgap (WBG) semiconductors, which are being widely investigated in the industry as an alternative to silicon switches. WBG devices have superior intrinsic properties, such as high thermal flux, of up to 120 W/cm2 (on average); junction temperature of 175–200 °C; blocking voltage limit of about 6.5 kV; switching frequency about 20-fold higher than that of Si; and up to 73% lower switching losses with a lower conduction voltage drop. This study presents a review of WBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices. The aim is to consider suitable cooling techniques for WBG inverters at different power levels.

scholarly journals Thermal Mapping of Power Semiconductors in H-Bridge Circuit

2020 ◽  
Vol 10 (12) ◽  
pp. 4340 ◽  
Author(s):  
Dao Zhou ◽  
Yingzhou Peng ◽  
Francesco Iannuzzo ◽  
Michael Hartmann ◽  
Frede Blaabjerg
Keyword(s):  
Thermal Stress ◽  
Bridge Circuit ◽  
Circuit Simulation ◽  
Piecewise Linear ◽  
Factor Loading ◽  
Electrical Circuit ◽  
Junction Temperature ◽  
Modulation Method ◽  
Switching Frequency ◽  
Power Semiconductors

In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

scholarly journals The current status of power semiconductors

2015 ◽  
Vol 28 (2) ◽  
pp. 193-203 ◽  
Author(s):  
Jan Vobecký
Keyword(s):  
Functional Performance ◽  
Wide Bandgap ◽  
Current Status ◽  
Design And Technology ◽  
Power Sector ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Silicon Devices

Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.

scholarly journals Asymmetrical ZVS-PWM Switched-Capacitor Based Half-Bridge DC-DC Converter With Switch Peak Voltage of Vin/2

2020 ◽  
Author(s):  
Angelica Paula Caus ◽  
Guilherme Martins Leandro ◽  
Ivo Barbi
Keyword(s):  
Theoretical Analysis ◽  
Power Converter ◽  
Maximum Efficiency ◽  
Switching Frequency ◽  
Switched Capacitor ◽  
Peak Voltage ◽  
Zero Voltage Switching ◽  
Power Switches ◽  
Converter Topology ◽  
Bus Voltage

This paper presents a new power converter topology<br>generated by the integration of the asymmetrical ZVS-PWM dcdc converter with a switched-capacitor ladder-type commutation<br>cell. Circuit operation and theoretical analysis with emphasis on<br>the soft-commutation process are included in the paper. The<br>main advantage of the proposed converter with respect to the<br>conventional asymmetrical half-bridge dc-dc converter is the<br>reduction of the voltage stress across the power switches to the<br>half of the input dc bus voltage, enabling the utilization of lower<br>voltage rating components. Experiments conducted on a<br>laboratory prototype with 1.4 kW power-rating, 800 V input<br>voltage, 48 V output voltage and 100 kHz switching frequency<br>are included, to verify the theoretical analysis and the design<br>methodology. The maximum efficiency of the experimental nonoptimized prototype was 93.6%.<br>Index Terms - Asymmetrical dc-dc converter, pulse-widthmodulation, switched-capacitor, zero voltage switching.<div><br><br></div>

scholarly journals Design and Implementation of 2.5kW IBFB-LLC DC/ DC Converter Using SiC Mosfet

2021 ◽  
Vol 31.2 (149) ◽  
pp. 7-14
Keyword(s):  
High Frequency ◽  
Power Flow ◽  
Input Voltage ◽  
Voltage Range ◽  
Zero Voltage Switching ◽  
Design And Implementation ◽  
Switching Losses ◽  
Power Switches ◽  
Isolation Transformer ◽  
Zero Voltage

Interleaved Boost Full Bridge integrated LLC resonant (IBFB- LLC) is an isolated DC/DC converter with directional power flow, which can cope with a wide input voltage range of PV applications. The main losses of the converter are switching losses of the power switches and transformers losses. This paper proposes a method to improve the efficiency of the IBFB converter due to zero voltage switching technique, in combination with employing new SiC MOSFET technology instead of the conventional Si MOSFET. In addition, Litz wire is also adopted to reduce the losses on the high frequency isolation transformer. Both numerical simulations and experiments with a prototype 2.5kW converter are implemented to verify the feasibility and effectiveness of the proposed solution.

Design of a Low Inductance Power Module Based on Low Temperature Co-fired Ceramic

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000032-000038
Author(s):  
Atanu Dutta ◽  
Simon S. Ang
Keyword(s):  
Low Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Semiconductor Devices ◽  
Building Blocks ◽  
Wide Bandgap ◽  
Switching Frequency ◽  
Full Potential ◽  
Power Electronic ◽  
Power Module ◽  
Parasitic Inductance

Abstract Efficient, compact, and reliable power electronic modules are building blocks of modern day power electronic systems. In recent times, wide bandgap semiconductor devices, such as, silicon carbide (SiC) and gallium nitride (GaN), are widely investigated and used in the power electronic modules to realize power dense, highly efficient, and fast switching modules for various applications. For high power applications is it required to parallel and series several devices to achieve high current and high voltage specifications, which results in larger current conducting traces. One of the major obstacles in using these wideband gap power semiconductor devices are the internal module stray inductance that is associated with these current conducting traces. With increasing demand for higher switching frequency, the internal module parasitic inductance must be reduced to as minimum as possible in order to utilize the full potential of the wide bandgap devices. A multi-layer approach of low-temperature co-fired ceramic (LTCC) to package the wide bandgap devices is investigated. The multi-layer design freedom by using LTCC can be utilized to reduce the footprint of the overall power module, electrical interconnects, hence, reducing the package parasitic inductance. LTCC also facilitates high temperature operations and has a coefficient of thermal expansion matching with wide bandgap devices. In this paper, we report on a LTCC based power module design where LTCC is utilized as an isolation layer between the source and the drain of the power devices. A simulation based parasitic inductance analysis and electro-thermal-mechanical study is performed using ANSYS Workbench Tools to investigate the feasibility of this LTCC based design.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated &gt; 1200V, &gt; 100A, &gt; 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

scholarly journals Step-Up Series Resonant DC–DC Converter with Bidirectional-Switch-Based Boost Rectifier for Wide Input Voltage Range Photovoltaic Applications

Energies ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3747 ◽  
Author(s):  
Abualkasim Bakeer ◽  
Andrii Chub ◽  
Dmitri Vinnikov
Keyword(s):  
Theoretical Analysis ◽  
Duty Cycle ◽  
Input Voltage ◽  
Voltage Regulation ◽  
Switching Frequency ◽  
Voltage Gain ◽  
Voltage Range ◽  
Dc Voltage ◽  
Wide Range ◽  
Series Resonant

This paper proposes a high gain DC–DC converter based on the series resonant converter (SRC) for photovoltaic (PV) applications. This study considers low power applications, where the resonant inductance is usually relatively small to reduce the cost of the converter realization, which results in low-quality factor values. On the other hand, these SRCs can be controlled at a fixed switching frequency. The proposed topology utilizes a bidirectional switch (AC switch) to regulate the input voltage in a wide range. This study shows that the existing topology with a bidirectional switch has a limited input voltage regulation range. To avoid this issue, the resonant tank is rearranged in the proposed converter to the resonance capacitor before the bidirectional switch. By this rearrangement, the dependence of the DC voltage gain on the duty cycle is changed, so the proposed converter requires a smaller duty cycle than that of the existing counterpart at the same gain. Theoretical analysis shows that the input voltage regulation range is extended to the region of high DC voltage gain values at the maximum input current. Contrary to the existing counterpart, the proposed converter can be realized with a wide range of the resonant inductance values without compromising the input voltage regulation range. Nevertheless, the proposed converter maintains advantages of the SRC, such as zero voltage switching (ZVS) turn-on of the primary-side semiconductor switches. In addition, the output-side diodes are turned off at zero current. The proposed converter is analyzed and compared with the existing counterpart theoretically and experimentally. A 300 W experimental prototype is used to validate the theoretical analysis of the proposed converter. The peak efficiency of the converter is 96.5%.

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