Laser-enhanced electroless plating of silver seed layers for selective electroless copper deposition

2008 ◽  
Vol 20 (4) ◽  
pp. 218-223 ◽  
Author(s):  
Nicholas S. Dellas ◽  
Kenneth Meinert ◽  
Suzanne E. Mohney
Keyword(s):  
Electroless Plating ◽  
Copper Deposition ◽  
Electroless Copper ◽  
Seed Layers

Post-etch treatment enabled electroless copper metallization of porous dielectric

2013 ◽  
Vol 1559 ◽  
Author(s):  
Yezdi N. Dordi
Keyword(s):  
Electroless Plating ◽  
Dielectric Surface ◽  
Copper Deposition ◽  
Copper Metallization ◽  
Plasma Etch ◽  
Thin Carbon ◽  
Electroless Copper ◽  
Pet Film ◽  
Carbon Based

ABSTRACTThis paper describes an alternate two-step metallization scheme for porous dielectrics. The patterned dielectric surface is first treated in a plasma etch chamber where the dielectric surface is coated with a very thin carbon-based film. This is followed by electroless copper deposition. The plasma post-etch treatment (PET) film seals the pores of the dielectric, minimizes dielectric damage, and functionalizes the dielectric to enable electroless plating.

scholarly journals Laser-Induced Selective Electroless Plating on PC/ABS Polymer: Minimisation of Thermal Effects for Supreme Processing Speed

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2427
Author(s):  
Karolis Ratautas ◽  
Vytautas Vosylius ◽  
Aldona Jagminienė ◽  
Ina Stankevičienė ◽  
Eugenijus Norkus ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electroless Plating ◽  
Thermal Effects ◽  
Chemical Activation ◽  
Polymer Surface ◽  
Copper Deposition ◽  
Limiting Factor ◽  
Surface Activation ◽  
Laser Writing ◽  
Electroless Copper

The selective surface activation induced by laser (SSAIL) for electroless copper deposition on Polycarbonate/Acrylonitrile Butadiene Styrene (PC/ABS) blend is one of the promising techniques of electric circuit formation on free-shape dielectric surfaces, which broadens capabilities of 3D microscopic integrated devices (3D-MIDs). The process consists of laser excitation, chemical activation of laser-excited areas by dipping in a liquid and electroless copper deposition of the laser-treated areas. The limiting factor in increasing throughput of the technology is a laser activation step. Laser writing is performed by modern galvanometric scanners which reach the scanning speed of several meters per second. However, adverse thermal effects on PC/ABS polymer surface abridge the high-speed laser writing. In this work, an investigation was conducted on how these thermal effects limit surface activation for selective metal deposition from the view of physics and chemistry. An advanced laser beam scanning technique of interlacing with precise accuracy and the pulse-on-demand technique was applied to overcome mentioned problems for fast laser writing. Initially, the modelling of transient heat conduction was performed. The results revealed a significant reduction in heat accumulation. Applied methods of laser writing allowed the overall processing rate to increase by up to 2.4 times. Surface morphology was investigated by a scanning electron microscope. Energy-dispersive X-ray spectroscopy was used to investigate the modification of atomic concentration on the surface after laser treatment. Experiments did not show a correlation between surface morphology and electroless plating on laser-treated areas. However, significant variation in the composition of the material was revealed depending on the surface activity for electroless plating.

Organic Solution Deposition of Copper Seed Layers onto Barrier Metals

2000 ◽  
Vol 612 ◽  
Author(s):  
H. Gu ◽  
R. Fang ◽  
T. J. O'Keefe ◽  
M. J. O'Keefe ◽  
W.-S. Shih ◽  
...  
Keyword(s):  
Thin Films ◽  
Seed Layer ◽  
Copper Deposition ◽  
Copper Films ◽  
Exchange Reactions ◽  
Organic Solution ◽  
Spontaneous Deposition ◽  
Electroless Copper ◽  
Barrier Metal ◽  
Seed Layers

AbstractSpontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated. Based on electrochemically driven cementation exchange reactions, the process was used to produce adherent, selectively deposited copper metal particulate films on blanket and patterned barrier metal thin films on silicon substrates. The organic solution deposited copper films were capable of acting as seed layers for subsequent electrolytic and electroless copper deposition processes using standard plating baths. Electroless and electrolytic copper films from 0.1µm to 1.0µm thick were produced on a variety of samples on which the organic solution copper acted as the initial catalytic seed layer. The feasibility of using organic solution deposited palladium as a seed layer followed by electroless copper deposition has also been demonstrated. In addition, experiments conducted on patterned barrier metal samples with exposed areas of dielectric such as polyimide indicated that no organic solution copper or palladium deposition occurred on the insulating materials.

Comparative study of electroless copper deposition based on the seed layers of Pd, PtPd and AuPd

2009 ◽  
Vol 255 (6) ◽  
pp. 3713-3718 ◽  
Author(s):  
Chuanli Ma ◽  
Weichun Ye ◽  
Xuezhao Shi ◽  
Yanlong Chang ◽  
Yang Chen ◽  
...  
Keyword(s):  
Comparative Study ◽  
Copper Deposition ◽  
Electroless Copper ◽  
Seed Layers

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

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