Post-etch treatment enabled electroless copper metallization of porous dielectric

2013 ◽  
Vol 1559 ◽  
Author(s):  
Yezdi N. Dordi
Keyword(s):  
Electroless Plating ◽  
Dielectric Surface ◽  
Copper Deposition ◽  
Copper Metallization ◽  
Plasma Etch ◽  
Thin Carbon ◽  
Electroless Copper ◽  
Pet Film ◽  
Carbon Based

ABSTRACTThis paper describes an alternate two-step metallization scheme for porous dielectrics. The patterned dielectric surface is first treated in a plasma etch chamber where the dielectric surface is coated with a very thin carbon-based film. This is followed by electroless copper deposition. The plasma post-etch treatment (PET) film seals the pores of the dielectric, minimizes dielectric damage, and functionalizes the dielectric to enable electroless plating.

Laser-enhanced electroless plating of silver seed layers for selective electroless copper deposition

2008 ◽  
Vol 20 (4) ◽  
pp. 218-223 ◽  
Author(s):  
Nicholas S. Dellas ◽  
Kenneth Meinert ◽  
Suzanne E. Mohney
Keyword(s):  
Electroless Plating ◽  
Copper Deposition ◽  
Electroless Copper ◽  
Seed Layers

Electroless Copper Deposition on Metals and Metal Silicides

MRS Bulletin ◽  
1994 ◽  
Vol 19 (8) ◽  
pp. 55-62 ◽  
Author(s):  
Cecilia Y. Mak
Keyword(s):  
Large Scale ◽  
Film Growth ◽  
Deposition Process ◽  
Copper Deposition ◽  
Copper Metallization ◽  
Ultraviolet Lithography ◽  
Chemical Plating ◽  
Metal Silicides ◽  
Electroless Copper ◽  
Substrate Surfaces

Chemical plating techniques have been used in silicon processing for many years for junction delineation and ohmic contact formation. In recent years, interest in this area has been renewed because of the potential use of electroless copper deposition for ultra-large-scale integration (ULSI) metallization and for the formation of thin metal etch masks for deep-ultraviolet lithography. Good deposition selectivity, low operating temperature, high copper purity, good filling characteristics, and planar topography have been among the many advantageous attributes reported from early investigations.In the June 1993 issue of theMRS Bulletinon Copper Metallization, Cho et al. gave an exposition on the use of electroless copper for VLSI. More comprehensive reviews of the electrochemical fundamentals can be found in References 8,9, and 10. This article summarizes the current understanding of various chemical and material aspects of this deposition method in an attempt to give an overview of the film growth characteristics for thin film applications. Because of length limitations, only selected topics are included. The emphasis is on the initiation conditions and the resultant microstructure and properties obtained. We also discuss special considerations for fine pattern formation.The information presented here applies primarily to electroless copper deposition on metals and metal silicides since these are the typical substrate surfaces for metallization in contact vias of ULSI circuits. Strictly speaking, metallization of upper-level interconnects occurs mostly on a dielectric base. However, since copper systems usually require a diffusion barrier to shield the copper from diffusing into the silicon, we can treat the deposition process startingfrom this layer onward.

scholarly journals Laser-Induced Selective Electroless Plating on PC/ABS Polymer: Minimisation of Thermal Effects for Supreme Processing Speed

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2427
Author(s):  
Karolis Ratautas ◽  
Vytautas Vosylius ◽  
Aldona Jagminienė ◽  
Ina Stankevičienė ◽  
Eugenijus Norkus ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electroless Plating ◽  
Thermal Effects ◽  
Chemical Activation ◽  
Polymer Surface ◽  
Copper Deposition ◽  
Limiting Factor ◽  
Surface Activation ◽  
Laser Writing ◽  
Electroless Copper

The selective surface activation induced by laser (SSAIL) for electroless copper deposition on Polycarbonate/Acrylonitrile Butadiene Styrene (PC/ABS) blend is one of the promising techniques of electric circuit formation on free-shape dielectric surfaces, which broadens capabilities of 3D microscopic integrated devices (3D-MIDs). The process consists of laser excitation, chemical activation of laser-excited areas by dipping in a liquid and electroless copper deposition of the laser-treated areas. The limiting factor in increasing throughput of the technology is a laser activation step. Laser writing is performed by modern galvanometric scanners which reach the scanning speed of several meters per second. However, adverse thermal effects on PC/ABS polymer surface abridge the high-speed laser writing. In this work, an investigation was conducted on how these thermal effects limit surface activation for selective metal deposition from the view of physics and chemistry. An advanced laser beam scanning technique of interlacing with precise accuracy and the pulse-on-demand technique was applied to overcome mentioned problems for fast laser writing. Initially, the modelling of transient heat conduction was performed. The results revealed a significant reduction in heat accumulation. Applied methods of laser writing allowed the overall processing rate to increase by up to 2.4 times. Surface morphology was investigated by a scanning electron microscope. Energy-dispersive X-ray spectroscopy was used to investigate the modification of atomic concentration on the surface after laser treatment. Experiments did not show a correlation between surface morphology and electroless plating on laser-treated areas. However, significant variation in the composition of the material was revealed depending on the surface activity for electroless plating.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Selective Electroless Copper Deposition within Block Copolymer Microdomains

2000 ◽  
Vol 12 (6) ◽  
pp. 1628-1633 ◽  
Author(s):  
Yot Boontongkong ◽  
Robert E. Cohen ◽  
Michael F. Rubner
Keyword(s):  
Block Copolymer ◽  
Copper Deposition ◽  
Electroless Copper
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