scholarly journals Assessment of dielectric charging in micro-electro-mechanical system capacitive switches

2013 ◽  
Vol 26 (3) ◽  
pp. 239-245
Author(s):  
M. Koutsoureli ◽  
L. Michalas ◽  
G. Papaioannou
Keyword(s):  
Mechanical System ◽  
Material Properties ◽  
Micro Electro Mechanical System ◽  
Capacitive Switches ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Metal Insulator Metal ◽  
Simultaneous Assessment

The assessment of dielectric charging in MEMS capacitive switches is investigated. The information can be obtained only from simultaneous assessment of Metal-Insulator-Metal capacitance and MEMS capacitive switches the former allowing the determination of material properties and the latter of the device.

Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film

2018 ◽  
Author(s):  
D. Birmpiliotis ◽  
M. Koutsoureli ◽  
L. Buhagier ◽  
G. Papaioannou ◽  
A. Ziaei
Keyword(s):  
Bottom Electrode ◽  
Single Layer ◽  
Capacitive Switches ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Low Dielectric ◽  
Insulator Film ◽  
Metal Insulator Metal ◽  
Mim Capacitors

Abstract Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstrate resistive switching with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer.

A correlation of capacitive RF-MEMS reliability to AlN dielectric film spontaneous polarization

2009 ◽  
Vol 1 (1) ◽  
pp. 43-47 ◽  
Author(s):  
Eleni Papandreou ◽  
George Papaioannou ◽  
Tomas Lisec
Keyword(s):  
Electrical Properties ◽  
Spontaneous Polarization ◽  
Degradation Rate ◽  
Rf Mems ◽  
Dielectric Film ◽  
Capacitive Switches ◽  
Metal Insulator ◽  
Micro Electro Mechanical Systems ◽  
Metal Insulator Metal ◽  
Life Tests

This paper investigates the effect of spontaneous polarization of magnetron-sputtered aluminum nitride on the electrical properties and reliability of Radio Frequency – Micro-Electro-Mechanical Systems capacitive switches. The assessment is performed with the aid of application of thermally stimulated polarization currents in metal-insulator-metal capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than that expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.

A comparative study of structural, mechanical and electrical properties of ZnO and AlN thin films for MEMS based piezoelectric sensors

2021 ◽  
Author(s):  
Vinay Srivastava ◽  
Jaspreet Singh ◽  
Parlad Kumar ◽  
Sataypal Singh Arora ◽  
Satinder Pal Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Material Properties ◽  
Material Characterization ◽  
Dissipation Factor ◽  
Piezoelectric Sensors ◽  
Metal Insulator ◽  
Mechanical And Electrical Properties ◽  
Output Stability ◽  
Metal Insulator Metal

Abstract In this work, a comparative study has been carried out to compare the relative performance of ZnO (Zinc Oxide) and AlN (Aluminum Nitride) thin films for their application in piezoelectric sensors. The thin films material properties are being characterized using various material characterization techniques such as SEM, XRD, and Nanoindentation. Further the MIM (Metal-Insulator-Metal) based devices have been fabricated with piezoelectric films sandwiched between Al electrodes. The devices have been evaluated for mechanical and electrical performances. The natural frequency of the devices recorded as 46.8 kHz (ZnO) and 40.8 kHz (AlN). The average nominal capacitance of the MIM structure is measured as ~98pF and ~120pF where as corresponding dissipation factor obtained as ~0.03 and ~0.0005 respectively for ZnO and AlN devices. The repeatability investigation carried out on the sample devices for up to 90 days and the output has been monitored. The result showed that the AlN devices exhibit better output stability compared to ZnO devices.

Dielectric charging model for metal-insulator-metal structures

2017 ◽  
Author(s):  
Anne-Charlotte Amiaud ◽  
Aude Leuliet ◽  
Julien Nagle ◽  
Brigitte Loiseaux ◽  
Paolo Martins ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Structures ◽  
Dielectric Charging ◽  
Metal Insulator Metal
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