scholarly journals 2-Step In-situ Annealing of Sputter Deposited MgB2 Thin Films

2003 ◽  
Vol 38 (11) ◽  
pp. 635-638
Author(s):  
Zon MORI ◽  
Yuichiro ISHIZAKI ◽  
Toshiya DOI ◽  
Yoshinori HAKURAKU ◽  
Michiya OKADA ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposited ◽  
Mgb2 Thin Films

On the enlargement of the lattice parameter c in sputter deposited in situ prepared thin films of YBa2Cu3Ox

1997 ◽  
Vol 292 (1-2) ◽  
pp. 277-281 ◽  
Author(s):  
D.K. Aswal ◽  
S.K. Gupta ◽  
Savita N. Narang ◽  
S.C. Sabharwal ◽  
M.K. Gupta
Keyword(s):  
Thin Films ◽  
Lattice Parameter ◽  
Sputter Deposited

scholarly journals In situ epitaxial MgB2 thin films for superconducting electronics

2002 ◽  
Vol 1 (1) ◽  
pp. 35-38 ◽  
Author(s):  
Xianghui Zeng ◽  
Alexej V. Pogrebnyakov ◽  
Armen Kotcharov ◽  
James E. Jones ◽  
X. X. Xi ◽  
...  
Keyword(s):  
Thin Films ◽  
Superconducting Electronics ◽  
Mgb2 Thin Films

In situ deposition of MgB2 thin films by magnetron cosputtering and sputtering combined with thermal evaporation

2005 ◽  
Vol 423 (3-4) ◽  
pp. 89-95 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
G. Linker ◽  
F. Ratzel ◽  
A.G. Zaitsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
In Situ Deposition ◽  
Mgb2 Thin Films

Electrical Transport and In-Situ X-Ray Studies of the Formation of TiSi2 Thin Films on Si

1986 ◽  
Vol 77 ◽  
Author(s):  
J. C. Hensel ◽  
J. M. Vandenberg ◽  
L. F. Mattheiss ◽  
F. C. Unterwald ◽  
A. Maury
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
Metallic Behavior ◽  
Distinctive Features ◽  
X Ray ◽  
Total Energies ◽  
Sputter Deposited

ABSTRACTThe formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and by electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti films on Si (001) → TiSi2 (C49 structure) → TiSi2 (C54 structure), with no evidence of lower suicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most importantly, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49 → C54 transition. Total energies for both phases are calculated and, consistent with the occurrence of a structural phase transformation, are found not to differ appreciably.

Superconducting properties of two-step in situ annealed MgB2 thin films

2004 ◽  
Vol 412-414 ◽  
pp. 1371-1375 ◽  
Author(s):  
Zon Mori ◽  
Toshiya Doi ◽  
Yuichiro Ishizaki ◽  
Hitoshi Kitaguchi ◽  
Michiya Okada ◽  
...  
Keyword(s):  
Thin Films ◽  
Superconducting Properties ◽  
Mgb2 Thin Films

Uniform MgB2 thin films grown on Si(111) and Al2O3(0001) substrates prepared by e-beam evaporation and in situ annealing methods

2006 ◽  
Vol 99 (8) ◽  
pp. 08M512 ◽  
Author(s):  
Yi Bing Zhang ◽  
Hong Mei Zhu ◽  
Shi Ping Zhou ◽  
Shi Ying Ding ◽  
Zhi Wei Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Mgb2 Thin Films

In situ synthesis of MgB2 thin films for tunnel junctions

2004 ◽  
Vol 85 (22) ◽  
pp. 5290-5292 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
F. Ratzel ◽  
G. Linker ◽  
A. G. Zaitsev
Keyword(s):  
Thin Films ◽  
Tunnel Junctions ◽  
In Situ Synthesis ◽  
Mgb2 Thin Films

Deposition of MgB2 Thin Films on Nb Substrates Using an In Situ Annealing PLD Method

2007 ◽  
Vol 546-549 ◽  
pp. 2027-2030 ◽  
Author(s):  
Yue Zhao ◽  
Yi Sun Wu ◽  
S.X. Dou ◽  
T. Tajima ◽  
O.S. Romanenko
Keyword(s):  
Thin Films ◽  
Large Scale ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Rf Cavities ◽  
Superconducting Rf ◽  
Mgb2 Thin Films ◽  
Scanning Electron

MgB2 thin films have been coated on Nb substrates without any buffer layers. An in situ pulsed laser deposition (PLD) method was used to prepare the coating. The interface between films and substrates has been characterized by scanning electron microscopy (SEM). Surface impedance has been measured for the MgB2 films on Nb substrates. The results were discussed with regard to the potential large scale applications in superconducting RF cavities.

In-situ annealing effect of sputter-deposited Nd1Ba2Cu3O7−δ thin films

1999 ◽  
Vol 354 (1-2) ◽  
pp. 195-200 ◽  
Author(s):  
Z. Mori ◽  
S. Nozoe ◽  
N. Yokoyama ◽  
S. Koba ◽  
T. Doi ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Effect ◽  
Sputter Deposited

scholarly journals Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

1999 ◽  
Vol 14 (11) ◽  
pp. 4307-4318 ◽  
Author(s):  
S. Hiboux ◽  
P. Muralt ◽  
T. Maeder
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Domain Wall ◽  
Diffraction Analysis ◽  
Piezoelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

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