In situ synthesis of MgB2 thin films for tunnel junctions

2004 ◽  
Vol 85 (22) ◽  
pp. 5290-5292 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
F. Ratzel ◽  
G. Linker ◽  
A. G. Zaitsev
Author(s):  
Zon MORI ◽  
Yuichiro ISHIZAKI ◽  
Toshiya DOI ◽  
Yoshinori HAKURAKU ◽  
Michiya OKADA ◽  
...  

2002 ◽  
Vol 1 (1) ◽  
pp. 35-38 ◽  
Author(s):  
Xianghui Zeng ◽  
Alexej V. Pogrebnyakov ◽  
Armen Kotcharov ◽  
James E. Jones ◽  
X. X. Xi ◽  
...  

2005 ◽  
Vol 423 (3-4) ◽  
pp. 89-95 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
G. Linker ◽  
F. Ratzel ◽  
A.G. Zaitsev ◽  
...  

2004 ◽  
Vol 412-414 ◽  
pp. 1371-1375 ◽  
Author(s):  
Zon Mori ◽  
Toshiya Doi ◽  
Yuichiro Ishizaki ◽  
Hitoshi Kitaguchi ◽  
Michiya Okada ◽  
...  

2015 ◽  
Vol 17 (19) ◽  
pp. 13082-13091 ◽  
Author(s):  
Pradip Thakur ◽  
Arpan Kool ◽  
Biswajoy Bagchi ◽  
Nur Amin Hoque ◽  
Sukhen Das ◽  
...  

Development of Ni(OH)2nanobelt modified electroactive PVDF thin films with colossal dielectric constantsviaa simplein situprocess.


2006 ◽  
Vol 99 (8) ◽  
pp. 08M512 ◽  
Author(s):  
Yi Bing Zhang ◽  
Hong Mei Zhu ◽  
Shi Ping Zhou ◽  
Shi Ying Ding ◽  
Zhi Wei Lin ◽  
...  
Keyword(s):  

2017 ◽  
Vol 53 (69) ◽  
pp. 9602-9605 ◽  
Author(s):  
Mingxiao Sun ◽  
Puxing Kuang ◽  
Leiqiang Qin ◽  
Cheng Gu ◽  
Zengqi Xie ◽  
...  

We describe a general strategy for synthesizing conjugated microporous fullerene thin films via a high-throughput, efficient and controllable thiophene-based electropolymerization.


2007 ◽  
Vol 546-549 ◽  
pp. 2027-2030 ◽  
Author(s):  
Yue Zhao ◽  
Yi Sun Wu ◽  
S.X. Dou ◽  
T. Tajima ◽  
O.S. Romanenko

MgB2 thin films have been coated on Nb substrates without any buffer layers. An in situ pulsed laser deposition (PLD) method was used to prepare the coating. The interface between films and substrates has been characterized by scanning electron microscopy (SEM). Surface impedance has been measured for the MgB2 films on Nb substrates. The results were discussed with regard to the potential large scale applications in superconducting RF cavities.


2006 ◽  
Vol 289 (1) ◽  
pp. 405-407 ◽  
Author(s):  
K. Kumar ◽  
K. Ramamoorthy ◽  
P.M. Koinkar ◽  
R. Chandramohan ◽  
K. Sankaranarayanan
Keyword(s):  

2003 ◽  
Vol 17 (04n06) ◽  
pp. 703-708 ◽  
Author(s):  
R. ROGAI ◽  
V. GALLUZZI ◽  
A. MANCINI ◽  
G. CELENTANO ◽  
T. PETRISOR ◽  
...  

We report on the growth of MgB 2 thin films by means of Pulsed Laser Deposition (PLD) and Electron Beam (EB) deposition techniques. In order to develop an in-situ deposition procedure both techniques have been exploited following two approaches: the "as grown" procedure, where the superconducting phase is formed during the film growth, and no further process is performed, and the "annealing" procedure, where precursor layers are deposited and annealed in argon atmosphere. In the case of EB evaporated films, the "as grown" procedure revealed to be inadequate, because of the low reactivity of the thermally evaporated species and the high magnesium volatility. On the contrary, using PLD, the higher reactivity of the plasma species promotes the formation of the superconducting phase at deposition temperature as low as 350°C. In the "annealing" procedure, different kinds of precursor layers have been studied, in order to reduce and prevent the fast Mg evaporation at high temperature. Different annealing processes were investigated in order to promote the interdiffusion and reaction between Mg and B. The films were characterised by means of resistivity measurements and X-ray analyses. The surface morphology was observed by SEM microscopy.


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